# MMBT9012G

**ST Semtech** · Bipolar (BJT) · SOT-23

MMBT9012G from ST Semtech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the PNP transistor; -VBE max 1 V at -VCE = 1 V, -IC = 100 mA, and -VEBO max 5 V. |
| 2 | E | passive | Emitter of the PNP transistor; -VEBO max 5 V and -IEBO max 100 nA at -VEB = 5 V. |
| 3 | C | passive | Collector of the PNP transistor; -VCBO 40 V, -VCEO 30 V, -IC max 500 mA. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | ST Semtech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector Base Breakdown Voltage | -V(BR)CBO | 40 |  |  | V | at -IC = 100 μA | 1 |
| Collector Emitter Breakdown Voltage | -V(BR)CEO | 30 |  |  | V | at -IC = 1 mA | 1 |
| Emitter Base Breakdown Voltage | -V(BR)EBO | 5 |  |  | V | at -IE = 100 μA | 1 |
| DC Current Gain (Current Gain Group G) | hFE | 100 |  | 250 |  | at -VCE = 1 V, -IC = 50 mA, Current Gain Group G | 1 |
| DC Current Gain (Current Gain Group H) | hFE | 160 |  | 400 |  | at -VCE = 1 V, -IC = 50 mA, Current Gain Group H | 1 |
| DC Current Gain | hFE | 40 |  |  |  | at -VCE = 1 V, -IC = 500 mA | 1 |
| Collector Base Cutoff Current | -ICBO |  |  | 100 | nA | at -VCB = 35 V | 1 |
| Emitter Base Cutoff Current | -IEBO |  |  | 100 | nA | at -VEB = 5 V | 1 |
| Collector Emitter Saturation Voltage | VCE(sat) |  |  | 0.6 | V | at -IC = 500 mA, -IB = 50 mA | 1 |
| Base Emitter Saturation Voltage | VBE(sat) |  |  | 1.2 | V | at -IC = 500 mA, -IB = 50 mA | 1 |
| Base Emitter Voltage | VBE |  |  | 1 | V | at -VCE = 1 V, -IC = 100 mA | 1 |
| Gain Bandwidth Product | fT | 100 |  |  | MHz | at -VCE = 6 V, -IC = 20 mA | 1 |
| Collector Base Voltage | -VCBO |  |  | 40 | V | Ta = 25 °C | 1 |
| Collector Emitter Voltage | -VCEO |  |  | 30 | V | Ta = 25 °C | 1 |
| Emitter Base Voltage | -VEBO |  |  | 5 | V | Ta = 25 °C | 1 |
| Collector Current | -IC |  |  | 500 | mA | Ta = 25 °C | 1 |
| Power Dissipation | Ptot |  |  | 200 | mW | Ta = 25 °C | 1 |
| Junction Temperature | Tj |  |  | 150 | °C |  | 1 |
| Storage Temperature Range | Tstg | -55 |  | 150 | °C |  | 1 |

## CAD (KiCad official)

- Symbol: `MMBT9012G`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `mmbt9012g-etched.step` / `mmbt9012g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mmbt9012g.step` / `mmbt9012g.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [ST Semtech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588880675121979392) (2 pp, sha256 `b1f771df47cd8bce`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/mmbt9012g-datasheet.pdf)