component
MMBT9012G
Public Made by Adomby adom
ST Semtech Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMMBT9012G
ST Semtech · Bipolar (BJT) · SOT-23
MMBT9012G from ST Semtech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the PNP transistor; -VBE max 1 V at -VCE = 1 V, -IC = 100 mA, and -VEBO max 5 V. |
| 2 | E | passive | Emitter of the PNP transistor; -VEBO max 5 V and -IEBO max 100 nA at -VEB = 5 V. |
| 3 | C | passive | Collector of the PNP transistor; -VCBO 40 V, -VCEO 30 V, -IC max 500 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ST Semtech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector Base Breakdown Voltage | -V(BR)CBO | 40 | V | at -IC = 100 μA | 1 | ||
| Collector Emitter Breakdown Voltage | -V(BR)CEO | 30 | V | at -IC = 1 mA | 1 | ||
| Emitter Base Breakdown Voltage | -V(BR)EBO | 5 | V | at -IE = 100 μA | 1 | ||
| DC Current Gain (Current Gain Group G) | hFE | 100 | 250 | at -VCE = 1 V, -IC = 50 mA, Current Gain Group G | 1 | ||
| DC Current Gain (Current Gain Group H) | hFE | 160 | 400 | at -VCE = 1 V, -IC = 50 mA, Current Gain Group H | 1 | ||
| DC Current Gain | hFE | 40 | at -VCE = 1 V, -IC = 500 mA | 1 | |||
| Collector Base Cutoff Current | -ICBO | 100 | nA | at -VCB = 35 V | 1 | ||
| Emitter Base Cutoff Current | -IEBO | 100 | nA | at -VEB = 5 V | 1 | ||
| Collector Emitter Saturation Voltage | VCE(sat) | 0.6 | V | at -IC = 500 mA, -IB = 50 mA | 1 | ||
| Base Emitter Saturation Voltage | VBE(sat) | 1.2 | V | at -IC = 500 mA, -IB = 50 mA | 1 | ||
| Base Emitter Voltage | VBE | 1 | V | at -VCE = 1 V, -IC = 100 mA | 1 | ||
| Gain Bandwidth Product | fT | 100 | MHz | at -VCE = 6 V, -IC = 20 mA | 1 | ||
| Collector Base Voltage | -VCBO | 40 | V | Ta = 25 °C | 1 | ||
| Collector Emitter Voltage | -VCEO | 30 | V | Ta = 25 °C | 1 | ||
| Emitter Base Voltage | -VEBO | 5 | V | Ta = 25 °C | 1 | ||
| Collector Current | -IC | 500 | mA | Ta = 25 °C | 1 | ||
| Power Dissipation | Ptot | 200 | mW | Ta = 25 °C | 1 | ||
| Junction Temperature | Tj | 150 | °C | 1 | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
MMBT9012G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
mmbt9012g-etched.step/mmbt9012g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmbt9012g.step/mmbt9012g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ST Semtech datasheet (2 pp, sha256
b1f771df47cd8bce, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).