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MMBT8050C

Public Made by Adom

by adom

ST(Semtech) Bipolar Transistors - BJT, TO-236. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MMBT8050C

ST(Semtech) · Bipolar Transistors - BJT · TO-236

MMBT8050C from ST(Semtech), in a TO-236. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base; emitter-base voltage max 6 V, DC current gain hFE 100 to 250 for the C grade at VCE = 1 V, IC = 100 mA.
2 E passive Emitter; the datasheet lists a maximum collector current of 1.5 A and a power dissipation of 350 mW.
3 C passive Collector; collector-base voltage max 40 V, collector-emitter voltage max 25 V, collector current max 1.5 A.

Key specifications

Parameter Value
Manufacturer ST(Semtech)
Package TO-236
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
DC Current Gain (MMBT8050C) hFE 100 250 VCE = 1 V, IC = 100 mA 1
DC Current Gain hFE 40 VCE = 1 V, IC = 800 mA 1
Collector Base Cutoff Current ICBO 100 nA VCB = 35 V 1
Emitter Base Cutoff Current IEBO 100 nA VEB = 6 V 1
Collector Base Breakdown Voltage V(BR)CBO 40 V IC = 100 µA 1
Collector Emitter Breakdown Voltage V(BR)CEO 25 V IC = 2 mA 1
Emitter Base Breakdown Voltage V(BR)EBO 6 V IE = 100 µA 1
Collector Emitter Saturation Voltage VCE(sat) 0.5 V IC = 800 mA, IB = 80 mA 1
Base Emitter Saturation Voltage VBE(sat) 1.2 V IC = 800 mA, IB = 80 mA 1
Base Emitter Voltage VBE(on) 1 V VCE = 1 V, IC = 10 mA 1
Gain Bandwidth Product fT 120 MHz VCE = 10 V, IC = 50 mA 1
Collector Base Voltage VCBO 40 V Ta = 25℃ 1
Collector Emitter Voltage VCEO 25 V Ta = 25℃ 1
Emitter Base Voltage VEBO 6 V Ta = 25℃ 1
Collector Current IC 1.5 A Ta = 25℃ 1
Power Dissipation Ptot 350 mW Ta = 25℃ 1
Junction Temperature Tj 150 ℃ Ta = 25℃ 1
Storage Temperature Range Tstg -55 150 ℃ Ta = 25℃ 1

CAD (KiCad official)

  • Symbol: MMBT8050C
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: TO-236 (KiCad packages3D, STEP)
  • 3D model files: mmbt8050c-etched.step / mmbt8050c-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt8050c.step / mmbt8050c.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ST(Semtech) datasheet (2 pp, sha256 6c6543fabd38660a, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF