component
MMBT8050C
Public Made by Adomby adom
ST(Semtech) Bipolar Transistors - BJT, TO-236. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMMBT8050C
ST(Semtech) · Bipolar Transistors - BJT · TO-236
MMBT8050C from ST(Semtech), in a TO-236. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base; emitter-base voltage max 6 V, DC current gain hFE 100 to 250 for the C grade at VCE = 1 V, IC = 100 mA. |
| 2 | E | passive | Emitter; the datasheet lists a maximum collector current of 1.5 A and a power dissipation of 350 mW. |
| 3 | C | passive | Collector; collector-base voltage max 40 V, collector-emitter voltage max 25 V, collector current max 1.5 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ST(Semtech) |
| Package | TO-236 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| DC Current Gain (MMBT8050C) | hFE | 100 | 250 | VCE = 1 V, IC = 100 mA | 1 | ||
| DC Current Gain | hFE | 40 | VCE = 1 V, IC = 800 mA | 1 | |||
| Collector Base Cutoff Current | ICBO | 100 | nA | VCB = 35 V | 1 | ||
| Emitter Base Cutoff Current | IEBO | 100 | nA | VEB = 6 V | 1 | ||
| Collector Base Breakdown Voltage | V(BR)CBO | 40 | V | IC = 100 µA | 1 | ||
| Collector Emitter Breakdown Voltage | V(BR)CEO | 25 | V | IC = 2 mA | 1 | ||
| Emitter Base Breakdown Voltage | V(BR)EBO | 6 | V | IE = 100 µA | 1 | ||
| Collector Emitter Saturation Voltage | VCE(sat) | 0.5 | V | IC = 800 mA, IB = 80 mA | 1 | ||
| Base Emitter Saturation Voltage | VBE(sat) | 1.2 | V | IC = 800 mA, IB = 80 mA | 1 | ||
| Base Emitter Voltage | VBE(on) | 1 | V | VCE = 1 V, IC = 10 mA | 1 | ||
| Gain Bandwidth Product | fT | 120 | MHz | VCE = 10 V, IC = 50 mA | 1 | ||
| Collector Base Voltage | VCBO | 40 | V | Ta = 25℃ | 1 | ||
| Collector Emitter Voltage | VCEO | 25 | V | Ta = 25℃ | 1 | ||
| Emitter Base Voltage | VEBO | 6 | V | Ta = 25℃ | 1 | ||
| Collector Current | IC | 1.5 | A | Ta = 25℃ | 1 | ||
| Power Dissipation | Ptot | 350 | mW | Ta = 25℃ | 1 | ||
| Junction Temperature | Tj | 150 | ℃ | Ta = 25℃ | 1 | ||
| Storage Temperature Range | Tstg | -55 | 150 | ℃ | Ta = 25℃ | 1 |
CAD (KiCad official)
- Symbol:
MMBT8050C - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: TO-236 (KiCad packages3D, STEP)
- 3D model files:
mmbt8050c-etched.step/mmbt8050c-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmbt8050c.step/mmbt8050c.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ST(Semtech) datasheet (2 pp, sha256
6c6543fabd38660a, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).