component
MMBT8050C-1.5A
Public Made by Adomby adom
PJSEMI Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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MMBT8050C-1.5A
PJSEMI · Bipolar Transistors - BJT · SOT-23
MMBT8050C-1.5A from PJSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | The base is driven through the emitter-base limit VEBO of 6 V and the base-emitter saturation voltage VBE(sat) is 1.2 V maximum at IC = 800 mA, IB = 80 mA. |
| 2 | Emitter | passive | The emitter-base breakdown voltage V(BR)EBO is 6 V minimum at IE = 100 µA, and the emitter-base rating VEBO is 6 V. |
| 3 | Collector | passive | The collector is rated for VCBO 40 V, VCEO 25 V and a collector current IC of 1.5 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | PJSEMI |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector Base Cutoff Current | ICBO | 100 | nA | at VCB = 35 V | 2 | ||
| Emitter Base Cutoff Current | IEBO | 100 | nA | at VEB = 6 V | 2 | ||
| Collector Base Breakdown Voltage | V(BR)CBO | 40 | V | at IC = 100 μA | 2 | ||
| Collector Emitter Breakdown Voltage | V(BR)CEO | 25 | V | at IC = 2 mA | 2 | ||
| Emitter Base Breakdown Voltage | V(BR)EBO | 6 | V | at IE = 100 μA | 2 | ||
| Collector Emitter Saturation Voltage | VCE(sat) | 0.5 | V | at IC = 800 mA, IB = 80 mA | 2 | ||
| Base Emitter Saturation Voltage | VBE(sat) | 1.2 | V | at IC = 800 mA, IB = 80 mA | 2 | ||
| Base Emitter On Voltage | VBE(on) | 1 | V | at VCE = 1 V, IC = 10 mA | 2 | ||
| Transition Frequency | FT | 120 | MHz | at VCE = 10 V, IC = 50 mA | 2 | ||
| DC Current Gain, gain group C | HFE | 100 | 250 | at VCE = 1 V, IC = 100 mA | 2 | ||
| DC Current Gain, gain group C | HFE | 40 | at VCE = 1 V, IC = 800 mA | 2 | |||
| Collector Base Voltage | VCBO | 40 | V | 1 | |||
| Collector Emitter Voltage | VCEO | 25 | V | 1 | |||
| Emitter Base Voltage | VEBO | 6 | V | 1 | |||
| Collector Current | IC | 1.5 | A | 1 | |||
| Maximum Power Dissipation | PD | 350 | mW | 1 | |||
| Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 |
CAD (KiCad official)
- Symbol:
MMBT8050C-1.5A - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
mmbt8050c-1-5a-etched.step/mmbt8050c-1-5a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmbt8050c-1-5a.step/mmbt8050c-1-5a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: PJSEMI datasheet (6 pp, sha256
8f6fdbf66830b72f, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).