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MMBT8050C-1.5A

Public Made by Adom

by adom

PJSEMI Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Contents

README

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MMBT8050C-1.5A

PJSEMI · Bipolar Transistors - BJT · SOT-23

MMBT8050C-1.5A from PJSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Base input The base is driven through the emitter-base limit VEBO of 6 V and the base-emitter saturation voltage VBE(sat) is 1.2 V maximum at IC = 800 mA, IB = 80 mA.
2 Emitter passive The emitter-base breakdown voltage V(BR)EBO is 6 V minimum at IE = 100 µA, and the emitter-base rating VEBO is 6 V.
3 Collector passive The collector is rated for VCBO 40 V, VCEO 25 V and a collector current IC of 1.5 A.

Key specifications

Parameter Value
Manufacturer PJSEMI
Package SOT-23
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector Base Cutoff Current ICBO 100 nA at VCB = 35 V 2
Emitter Base Cutoff Current IEBO 100 nA at VEB = 6 V 2
Collector Base Breakdown Voltage V(BR)CBO 40 V at IC = 100 μA 2
Collector Emitter Breakdown Voltage V(BR)CEO 25 V at IC = 2 mA 2
Emitter Base Breakdown Voltage V(BR)EBO 6 V at IE = 100 μA 2
Collector Emitter Saturation Voltage VCE(sat) 0.5 V at IC = 800 mA, IB = 80 mA 2
Base Emitter Saturation Voltage VBE(sat) 1.2 V at IC = 800 mA, IB = 80 mA 2
Base Emitter On Voltage VBE(on) 1 V at VCE = 1 V, IC = 10 mA 2
Transition Frequency FT 120 MHz at VCE = 10 V, IC = 50 mA 2
DC Current Gain, gain group C HFE 100 250 at VCE = 1 V, IC = 100 mA 2
DC Current Gain, gain group C HFE 40 at VCE = 1 V, IC = 800 mA 2
Collector Base Voltage VCBO 40 V 1
Collector Emitter Voltage VCEO 25 V 1
Emitter Base Voltage VEBO 6 V 1
Collector Current IC 1.5 A 1
Maximum Power Dissipation PD 350 mW 1
Junction Temperature TJ 150 ℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1

CAD (KiCad official)

  • Symbol: MMBT8050C-1.5A
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbt8050c-1-5a-etched.step / mmbt8050c-1-5a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt8050c-1-5a.step / mmbt8050c-1-5a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: PJSEMI datasheet (6 pp, sha256 8f6fdbf66830b72f, retrieved 2026-10-28, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF