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MMBT7002W

ST Semtech · MOSFETs · SOT-323

MMBT7002W from ST Semtech, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel enhancement MOSFET; continuous gate-source voltage is rated ±20 V and pulsed ±40 V.
2 Source passive Source terminal of the N-channel enhancement MOSFET; drain-source breakdown voltage is rated 60 V minimum (BVDSS).
3 Drain passive Drain terminal of the N-channel enhancement MOSFET; continuous drain current is rated 115 mA and pulsed drain current 800 mA.

Key specifications

Parameter Value
Manufacturer ST Semtech
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain Source Breakdown Voltage BVDSS 60 V at ID = 10 µA 1
Zero Gate Voltage Drain Current IDSS 1 µA at VDS = 60 V 1
Gate Source Leakage Current ±IGSS 100 nA at ±VGS = 20 V 1
Gate Source Threshold Voltage VGS(th) 1 2.5 V at VDS = VGS = 10 V, ID = 250 µA 1
Static Drain Source On Resistance RDS(ON) 7.5 Ω at VGS = 5 V, ID = 50 mA 1
Drain Source On Voltage VDS(ON) 1.5 V at VGS = 5 V, ID = 50 mA 1
Drain Source On Voltage VDS(ON) 3.75 V at VGS = 10 V, ID = 500 mA 1
Forward Transconductance gFS 80 mS at VDS = 10 V, ID = 200 mA 1
Input Capacitance Ciss 50 pF at VDS = 25 V, f = 1 MHz 1
Output Capacitance Coss 25 pF at VDS = 25 V, f = 1 MHz 1
Reverse Transfer Capacitance Crss 5 pF at VDS = 25 V, f = 1 MHz 1
Turn On Time ton 20 ns at VDD = 30V, RL = 150Ω, ID = 0.2A, VGS = 10V, RGEN = 25Ω 1
Turn Off Time toff 20 ns at VDD = 30V, RL = 150Ω, ID = 0.2A, VGS = 10V, RGEN = 25Ω 1
Drain Source Voltage VDSS 60 V 1
Drain Gate Voltage VDGR 60 V RGS ≤ 1 MΩ 1
Gate Source Voltage Continuous VGSS -20 20 V Continuous 1
Gate Source Voltage Pulsed VGSS -40 40 V Pulsed 1
Drain Current Continuous ID 115 mA Continuous 1
Drain Current Pulsed ID 800 mA Pulsed 1
Total Power Dissipation Ptot 200 mW 1
Junction Temperature Tj 150 °C 1
Storage Temperature Range TStg -55 150 °C 1

CAD (KiCad official)

  • Symbol: MMBT7002W
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: mmbt7002w-etched.step / mmbt7002w-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt7002w.step / mmbt7002w.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ST Semtech datasheet (3 pp, sha256 55a1d6f0b70b36c8, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF