component
MMBT7002W
Public Made by Adomby adom
ST Semtech MOSFETs, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMMBT7002W
ST Semtech · MOSFETs · SOT-323
MMBT7002W from ST Semtech, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel enhancement MOSFET; continuous gate-source voltage is rated ±20 V and pulsed ±40 V. |
| 2 | Source | passive | Source terminal of the N-channel enhancement MOSFET; drain-source breakdown voltage is rated 60 V minimum (BVDSS). |
| 3 | Drain | passive | Drain terminal of the N-channel enhancement MOSFET; continuous drain current is rated 115 mA and pulsed drain current 800 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ST Semtech |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain Source Breakdown Voltage | BVDSS | 60 | V | at ID = 10 µA | 1 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | at VDS = 60 V | 1 | ||
| Gate Source Leakage Current | ±IGSS | 100 | nA | at ±VGS = 20 V | 1 | ||
| Gate Source Threshold Voltage | VGS(th) | 1 | 2.5 | V | at VDS = VGS = 10 V, ID = 250 µA | 1 | |
| Static Drain Source On Resistance | RDS(ON) | 7.5 | Ω | at VGS = 5 V, ID = 50 mA | 1 | ||
| Drain Source On Voltage | VDS(ON) | 1.5 | V | at VGS = 5 V, ID = 50 mA | 1 | ||
| Drain Source On Voltage | VDS(ON) | 3.75 | V | at VGS = 10 V, ID = 500 mA | 1 | ||
| Forward Transconductance | gFS | 80 | mS | at VDS = 10 V, ID = 200 mA | 1 | ||
| Input Capacitance | Ciss | 50 | pF | at VDS = 25 V, f = 1 MHz | 1 | ||
| Output Capacitance | Coss | 25 | pF | at VDS = 25 V, f = 1 MHz | 1 | ||
| Reverse Transfer Capacitance | Crss | 5 | pF | at VDS = 25 V, f = 1 MHz | 1 | ||
| Turn On Time | ton | 20 | ns | at VDD = 30V, RL = 150Ω, ID = 0.2A, VGS = 10V, RGEN = 25Ω | 1 | ||
| Turn Off Time | toff | 20 | ns | at VDD = 30V, RL = 150Ω, ID = 0.2A, VGS = 10V, RGEN = 25Ω | 1 | ||
| Drain Source Voltage | VDSS | 60 | V | 1 | |||
| Drain Gate Voltage | VDGR | 60 | V | RGS ≤ 1 MΩ | 1 | ||
| Gate Source Voltage Continuous | VGSS | -20 | 20 | V | Continuous | 1 | |
| Gate Source Voltage Pulsed | VGSS | -40 | 40 | V | Pulsed | 1 | |
| Drain Current Continuous | ID | 115 | mA | Continuous | 1 | ||
| Drain Current Pulsed | ID | 800 | mA | Pulsed | 1 | ||
| Total Power Dissipation | Ptot | 200 | mW | 1 | |||
| Junction Temperature | Tj | 150 | °C | 1 | |||
| Storage Temperature Range | TStg | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
MMBT7002W - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files:
mmbt7002w-etched.step/mmbt7002w-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmbt7002w.step/mmbt7002w.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ST Semtech datasheet (3 pp, sha256
55a1d6f0b70b36c8, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).