component

MMBT5551G-B-AE3-R

Public Made by Adom

by adom

UTC Unisonic Tech Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsmmbt5551g-b-ae3-rfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
mmbt5551g-b-ae3-r / README.md
History Download
Ray mmbt5551g-b-ae3-r: specified limits as data (metadata.characteristics, 23 rows from the datasheet) 36967ca 17d ago

MMBT5551G-B-AE3-R

UTC Unisonic Tech · Bipolar (BJT) · SOT-23

MMBT5551G-B-AE3-R from UTC Unisonic Tech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E passive Emitter terminal of the NPN transistor; the datasheet rates the emitter-base voltage VEBO at 6 V maximum.
2 B input Base terminal of the NPN transistor, which drives the device; the datasheet specifies VBE(SAT) of 1 V at IC=10 mA/IB=1 mA and at IC=50 mA/IB=5 mA.
3 C passive Collector terminal of the NPN transistor; the datasheet rates the collector-emitter voltage VCEO at 160 V and DC collector current IC at 600 mA.

Key specifications

Parameter Value
Manufacturer UTC Unisonic Tech
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Breakdown Voltage VCBO 180 V IC=100A, IE=0 2
Collector-Emitter Breakdown Voltage VCEO 160 V IC=1mA, IB=0 2
Emitter-Base Breakdown Voltage VEBO 6 V IE=10μA, IC=0 2
Collector Cut-off Current ICBO 50 nA VCB=120V, IE=0 2
Emitter Cut-off Current IEBO 50 nA VBE=4V, IC=0 2
DC Current Gain hFE 80 VCE=5V, IC=1mA 2
DC Current Gain hFE 80 160 400 VCE=5V, IC=10mA 2
DC Current Gain classification, rank B (suffix -B) hFE 150 240 2
Collector-Emitter Saturation Voltage VCE(SAT) 0.15 V IC=10mA, IB=1mA 2
Collector-Emitter Saturation Voltage VCE(SAT) 0.2 V IC=50mA, IB=5mA 2
Base-Emitter Saturation Voltage VBE(SAT) 1 V IC=10mA, IB=1mA 2
Current Gain Bandwidth Product fT 100 300 MHz VCE=10V, IC=10mA, f=100MHz 2
Output Capacitance Cob 6 pF VCB=10V, IE=0, f=1MHz 2
Noise Figure NF 8 dB IC=0.25mA, VCE=5V, RS=1kΩ, f=10Hz ~ 15.7kHz 2
Collector-Base Voltage VCBO 180 V 2
Collector-Emitter Voltage VCEO 160 V 2
Emitter-Base Voltage VEBO 6 V 2
DC Collector Current IC 600 mA 2
Power Dissipation PD 350 mW 2
Junction Temperature TJ 150 °C 2
Storage Temperature TSTG -40 150 °C 2
Junction to Ambient thermal resistance θJA 357 °C/W 2
Junction to Case thermal resistance θJC 104 °C/W 2

CAD (KiCad official)

  • Symbol: MMBT5551G-B-AE3-R
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbt5551g-b-ae3-r-etched.step / mmbt5551g-b-ae3-r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt5551g-b-ae3-r.step / mmbt5551g-b-ae3-r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UTC Unisonic Tech datasheet (4 pp, sha256 ff582b1d1514c710, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF