component
MMBT5551G-B-AE3-R
Public Made by Adomby adom
UTC Unisonic Tech Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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mmbt5551g-b-ae3-r: specified limits as data (metadata.characteristics, 23 rows from the datasheet)
2 files changed
+314−1
README.md+30@@ -21,6 +21,36 @@ MMBT5551G-B-AE3-R from UTC Unisonic Tech, in a SOT-23. Pinout and pin descriptio | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Collector-Base Breakdown Voltage | VCBO | 180 | | | V | IC=100A, IE=0 | 2 |+| Collector-Emitter Breakdown Voltage | VCEO | 160 | | | V | IC=1mA, IB=0 | 2 |+| Emitter-Base Breakdown Voltage | VEBO | 6 | | | V | IE=10μA, IC=0 | 2 |+| Collector Cut-off Current | ICBO | | | 50 | nA | VCB=120V, IE=0 | 2 |+| Emitter Cut-off Current | IEBO | | | 50 | nA | VBE=4V, IC=0 | 2 |+| DC Current Gain | hFE | 80 | | | | VCE=5V, IC=1mA | 2 |+| DC Current Gain | hFE | 80 | 160 | 400 | | VCE=5V, IC=10mA | 2 |+| DC Current Gain classification, rank B (suffix -B) | hFE | 150 | | 240 | | | 2 |+| Collector-Emitter Saturation Voltage | VCE(SAT) | | | 0.15 | V | IC=10mA, IB=1mA | 2 |+| Collector-Emitter Saturation Voltage | VCE(SAT) | | | 0.2 | V | IC=50mA, IB=5mA | 2 |+| Base-Emitter Saturation Voltage | VBE(SAT) | | | 1 | V | IC=10mA, IB=1mA | 2 |+| Current Gain Bandwidth Product | fT | 100 | 300 | | MHz | VCE=10V, IC=10mA, f=100MHz | 2 |+| Output Capacitance | Cob | | | 6 | pF | VCB=10V, IE=0, f=1MHz | 2 |+| Noise Figure | NF | | | 8 | dB | IC=0.25mA, VCE=5V, RS=1kΩ, f=10Hz ~ 15.7kHz | 2 |+| Collector-Base Voltage | VCBO | | | 180 | V | | 2 |+| Collector-Emitter Voltage | VCEO | | | 160 | V | | 2 |+| Emitter-Base Voltage | VEBO | | | 6 | V | | 2 |+| DC Collector Current | IC | | | 600 | mA | | 2 |+| Power Dissipation | PD | | | 350 | mW | | 2 |+| Junction Temperature | TJ | | | 150 | °C | | 2 |+| Storage Temperature | TSTG | -40 | | 150 | °C | | 2 |+| Junction to Ambient thermal resistance | θJA | | | 357 | °C/W | | 2 |+| Junction to Case thermal resistance | θJC | | | 104 | °C/W | | 2 |+ ## CAD (KiCad official) - Symbol: `MMBT5551G-B-AE3-R`
page.json+284−1@@ -148,6 +148,289 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "ff582b1d1514c710",+ "rows": [+ {+ "name": "Collector-Base Breakdown Voltage",+ "symbol": "VCBO",+ "kind": "electrical",+ "unit": "V",+ "min": 180,+ "typ": null,+ "max": null,+ "conditions": "IC=100A, IE=0",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector-Emitter Breakdown Voltage",+ "symbol": "VCEO",+ "kind": "electrical",+ "unit": "V",+ "min": 160,+ "typ": null,+ "max": null,+ "conditions": "IC=1mA, IB=0",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Emitter-Base Breakdown Voltage",+ "symbol": "VEBO",+ "kind": "electrical",+ "unit": "V",+ "min": 6,+ "typ": null,+ "max": null,+ "conditions": "IE=10μA, IC=0",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector Cut-off Current",+ "symbol": "ICBO",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "VCB=120V, IE=0",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Emitter Cut-off Current",+ "symbol": "IEBO",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "VBE=4V, IC=0",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "DC Current Gain",+ "symbol": "hFE",+ "kind": "electrical",+ "unit": "",+ "min": 80,+ "typ": null,+ "max": null,+ "conditions": "VCE=5V, IC=1mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "DC Current Gain",+ "symbol": "hFE",+ "kind": "electrical",+ "unit": "",+ "min": 80,+ "typ": 160,+ "max": 400,+ "conditions": "VCE=5V, IC=10mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "DC Current Gain classification, rank B (suffix -B)",+ "symbol": "hFE",+ "kind": "electrical",+ "unit": "",+ "min": 150,+ "typ": null,+ "max": 240,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector-Emitter Saturation Voltage",+ "symbol": "VCE(SAT)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 0.15,+ "conditions": "IC=10mA, IB=1mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector-Emitter Saturation Voltage",+ "symbol": "VCE(SAT)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 0.2,+ "conditions": "IC=50mA, IB=5mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Base-Emitter Saturation Voltage",+ "symbol": "VBE(SAT)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "IC=10mA, IB=1mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Current Gain Bandwidth Product",+ "symbol": "fT",+ "kind": "electrical",+ "unit": "MHz",+ "min": 100,+ "typ": 300,+ "max": null,+ "conditions": "VCE=10V, IC=10mA, f=100MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance",+ "symbol": "Cob",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": null,+ "max": 6,+ "conditions": "VCB=10V, IE=0, f=1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Noise Figure",+ "symbol": "NF",+ "kind": "electrical",+ "unit": "dB",+ "min": null,+ "typ": null,+ "max": 8,+ "conditions": "IC=0.25mA, VCE=5V, RS=1kΩ, f=10Hz ~ 15.7kHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector-Base Voltage",+ "symbol": "VCBO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 180,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector-Emitter Voltage",+ "symbol": "VCEO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 160,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Emitter-Base Voltage",+ "symbol": "VEBO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 6,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "DC Collector Current",+ "symbol": "IC",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 600,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 350,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Junction Temperature",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Storage Temperature",+ "symbol": "TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -40,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Junction to Ambient thermal resistance",+ "symbol": "θJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 357,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Junction to Case thermal resistance",+ "symbol": "θJC",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 104,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -189,4 +472,4 @@ "visibility": { "public": true }-}+}