component
MMBT5551-6AF
Public Made by Adomby adom
FOSAN Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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MMBT5551-6AF
FOSAN · Bipolar (BJT) · SOT-23
MMBT5551-6AF from FOSAN, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; emitter-base voltage is limited to 6 V (VEBO) and emitter-base breakdown BVEBO is 6 V min at IE=10 uA. |
| 2 | E | passive | Emitter of the NPN transistor; the common terminal for the 6 V VEBO limit and 600 mA maximum collector current. |
| 3 | C | passive | Collector of the NPN transistor; VCBO is 180 V and VCEO is 150 V maximum, with IC up to 600 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | FOSAN |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage (IC=100uA, IE=0) | BVCBO | 180 | V | IC=100uA, IE=0 | 2 | ||
| Collector-Emitter Breakdown Voltage (IC=1mA, IB=0) | BVCEO | 150 | V | IC=1mA, IB=0 | 2 | ||
| Emitter-Base Breakdown Voltage (IE=10uA, IC=0) | BVEBO | 6 | V | IE=10uA, IC=0 | 2 | ||
| Collector-Base Leakage Current | ICBO | 100 | nA | VCB=180V, IE=0 | 2 | ||
| Collector-Emitter Leakage Current | ICEO | 100 | nA | VCE=120V, IB=0 | 2 | ||
| Emitter-Base Leakage Current | IEBO | 100 | nA | VEB=6V, IC=0 | 2 | ||
| DC Current Gain | HFE(1) | 80 | VCE=5V, IC=1mA | 2 | |||
| DC Current Gain | HFE(2) | 100 | 300 | VCE=5V, IC=10mA | 2 | ||
| DC Current Gain | HFE(3) | 50 | VCE=5V, IC=100mA | 2 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.15 | V | IC=10mA, IB=1mA | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.2 | V | IC=50mA, IB=5mA | 2 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | 1 | V | IC=10mA, IB=1mA | 2 | ||
| Transition Frequency | fT | 100 | 300 | MHZ | VCE=10V, IC=10mA | 2 | |
| Collector-Base Voltage | VCBO | 180 | V | 1 | |||
| Collector-Emitter Voltage | VCEO | 150 | V | 1 | |||
| Emitter-Base Voltage | VEBO | 6 | V | 1 | |||
| Collector Current | IC | 600 | mA | 1 | |||
| Power dissipation | PC | 300 | mW | Ta=25℃ | 1 | ||
| Junction and Storage Temperature | TJ,Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RΘJA | 417 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
MMBT5551-6AF - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
mmbt5551-6af-etched.step/mmbt5551-6af-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmbt5551-6af.step/mmbt5551-6af.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: FOSAN datasheet (4 pp, sha256
b37e2cb55f29f7d8, retrieved 2026-10-21, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).