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MMBT5551-6AF

Public Made by Adom

by adom

FOSAN Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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MMBT5551-6AF

FOSAN · Bipolar (BJT) · SOT-23

MMBT5551-6AF from FOSAN, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN transistor; emitter-base voltage is limited to 6 V (VEBO) and emitter-base breakdown BVEBO is 6 V min at IE=10 uA.
2 E passive Emitter of the NPN transistor; the common terminal for the 6 V VEBO limit and 600 mA maximum collector current.
3 C passive Collector of the NPN transistor; VCBO is 180 V and VCEO is 150 V maximum, with IC up to 600 mA.

Key specifications

Parameter Value
Manufacturer FOSAN
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Breakdown Voltage (IC=100uA, IE=0) BVCBO 180 V IC=100uA, IE=0 2
Collector-Emitter Breakdown Voltage (IC=1mA, IB=0) BVCEO 150 V IC=1mA, IB=0 2
Emitter-Base Breakdown Voltage (IE=10uA, IC=0) BVEBO 6 V IE=10uA, IC=0 2
Collector-Base Leakage Current ICBO 100 nA VCB=180V, IE=0 2
Collector-Emitter Leakage Current ICEO 100 nA VCE=120V, IB=0 2
Emitter-Base Leakage Current IEBO 100 nA VEB=6V, IC=0 2
DC Current Gain HFE(1) 80 VCE=5V, IC=1mA 2
DC Current Gain HFE(2) 100 300 VCE=5V, IC=10mA 2
DC Current Gain HFE(3) 50 VCE=5V, IC=100mA 2
Collector-Emitter Saturation Voltage VCE(sat) 0.15 V IC=10mA, IB=1mA 2
Collector-Emitter Saturation Voltage VCE(sat) 0.2 V IC=50mA, IB=5mA 2
Base-Emitter Saturation Voltage VBE(sat) 1 V IC=10mA, IB=1mA 2
Transition Frequency fT 100 300 MHZ VCE=10V, IC=10mA 2
Collector-Base Voltage VCBO 180 V 1
Collector-Emitter Voltage VCEO 150 V 1
Emitter-Base Voltage VEBO 6 V 1
Collector Current IC 600 mA 1
Power dissipation PC 300 mW Ta=25℃ 1
Junction and Storage Temperature TJ,Tstg -55 150 ℃ 1
Thermal Resistance Junction-Ambient RΘJA 417 ℃/W 1

CAD (KiCad official)

  • Symbol: MMBT5551-6AF
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbt5551-6af-etched.step / mmbt5551-6af-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt5551-6af.step / mmbt5551-6af.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: FOSAN datasheet (4 pp, sha256 b37e2cb55f29f7d8, retrieved 2026-10-21, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF