# MMBT5401DW

**Shikues** · Bipolar (BJT) · SOT-363

MMBT5401DW from Shikues, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E1 | passive | Emitter of transistor 1 (PNP); VEBO max -6 V, V(BR)EBO -6 V min at IE=-10uA. |
| 2 | B1 | passive | Base of transistor 1 (PNP); IEBO max -0.1 uA at VEB=-6V, VBE(sat) max -1 V at IC=-10mA. |
| 3 | C2 | passive | Collector of transistor 2 (PNP); VCEO max -160 V, VCBO max -180 V, IC continuous -600 mA. |
| 4 | E2 | passive | Emitter of transistor 2 (PNP); VEBO max -6 V, V(BR)EBO -6 V min at IE=-10uA. |
| 5 | B2 | passive | Base of transistor 2 (PNP); IEBO max -0.1 uA at VEB=-6V, VBE(sat) max -1 V at IC=-10mA. |
| 6 | C1 | passive | Collector of transistor 1 (PNP); VCEO max -160 V, VCBO max -180 V, IC continuous -600 mA. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Shikues |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | -180 |  |  | V | IC=-100uA, IE=0 | 1 |
| Collector-emitter breakdown voltage | V(BR)CEO | -160 |  |  | V | IC=-1mA, IB=0 | 1 |
| Emitter-base breakdown voltage | V(BR)EBO | -6 |  |  | V | IE=-10uA, IC=0 | 1 |
| Collector cut-off current | ICBO |  |  | -0.1 | uA | VCB=-180V, IE=0 | 1 |
| Emitter cut-off current | IEBO |  |  | -0.1 | uA | VEB=-6V, IC=0 | 1 |
| DC current gain | hFE | 40 |  | 180 |  | VCE=-5V, IC=-1mA | 1 |
| DC current gain | hFE | 100 |  |  |  | VCE=-5V, IC=-10mA | 1 |
| DC current gain | hFE | 20 |  | 70 |  |  | 1 |
| Collector-emitter saturation voltage | VCE(sat) |  | -0.12 | -0.4 | V | IC=-10mA, IB=-1mA | 1 |
| Collector-emitter saturation voltage | VCE(sat) |  | -0.5 | -0.8 | V | IC=-50mA, IB=-5mA | 1 |
| Base-emitter saturation voltage | VBE(sat) |  | -0.75 | -1 | V | IC=-10mA, IB=-1mA | 1 |
| Base-emitter saturation voltage | VBE(sat) |  | -0.8 | -1 | V | IC=-50mA, IB=-5mA | 1 |
| Transition frequency | fT | 100 |  |  | MHz | VCE=-10V, IC=-10mA, f=100MHz | 1 |
| Collector output capacitance | Cob |  |  | 5 | pF | VCB=-10V, IE=0, f=1MHz | 1 |
| Collector-base voltage | VCBO |  |  | -180 | V |  | 1 |
| Collector-emitter voltage | VCEO |  |  | -160 | V |  | 1 |
| Emitter-base voltage | VEBO |  |  | -6 | V |  | 1 |
| Collector current, continuous | IC |  |  | -600 | mA |  | 1 |
| Collector power dissipation | PC |  |  | 300 | mW |  | 1 |
| Junction temperature | Tj |  |  | 150 | ℃ |  | 1 |
| Storage temperature | Tstg | -55 |  | 150 | ℃ |  | 1 |
| Thermal resistance junction to ambient | RθJA |  | 625 |  | ℃/W |  | 1 |

## CAD (KiCad official)

- Symbol: `MMBT5401DW`
- Footprint: `Package_TO_SOT_SMD:SOT-363_SC-70-6`
- 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files: `mmbt5401dw-etched.step` / `mmbt5401dw-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mmbt5401dw.step` / `mmbt5401dw.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Shikues datasheet](docs/mmbt5401dw-datasheet.pdf) (3 pp, sha256 `6dceb77a23edddd6`, retrieved 2026-11-04, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/mmbt5401dw-datasheet.pdf)