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MMBT5401DW

Public Made by Adom

by adom

Shikues Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MMBT5401DW

Shikues · Bipolar (BJT) · SOT-363

MMBT5401DW from Shikues, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E1 passive Emitter of transistor 1 (PNP); VEBO max -6 V, V(BR)EBO -6 V min at IE=-10uA.
2 B1 passive Base of transistor 1 (PNP); IEBO max -0.1 uA at VEB=-6V, VBE(sat) max -1 V at IC=-10mA.
3 C2 passive Collector of transistor 2 (PNP); VCEO max -160 V, VCBO max -180 V, IC continuous -600 mA.
4 E2 passive Emitter of transistor 2 (PNP); VEBO max -6 V, V(BR)EBO -6 V min at IE=-10uA.
5 B2 passive Base of transistor 2 (PNP); IEBO max -0.1 uA at VEB=-6V, VBE(sat) max -1 V at IC=-10mA.
6 C1 passive Collector of transistor 1 (PNP); VCEO max -160 V, VCBO max -180 V, IC continuous -600 mA.

Key specifications

Parameter Value
Manufacturer Shikues
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO -180 V IC=-100uA, IE=0 1
Collector-emitter breakdown voltage V(BR)CEO -160 V IC=-1mA, IB=0 1
Emitter-base breakdown voltage V(BR)EBO -6 V IE=-10uA, IC=0 1
Collector cut-off current ICBO -0.1 uA VCB=-180V, IE=0 1
Emitter cut-off current IEBO -0.1 uA VEB=-6V, IC=0 1
DC current gain hFE 40 180 VCE=-5V, IC=-1mA 1
DC current gain hFE 100 VCE=-5V, IC=-10mA 1
DC current gain hFE 20 70 1
Collector-emitter saturation voltage VCE(sat) -0.12 -0.4 V IC=-10mA, IB=-1mA 1
Collector-emitter saturation voltage VCE(sat) -0.5 -0.8 V IC=-50mA, IB=-5mA 1
Base-emitter saturation voltage VBE(sat) -0.75 -1 V IC=-10mA, IB=-1mA 1
Base-emitter saturation voltage VBE(sat) -0.8 -1 V IC=-50mA, IB=-5mA 1
Transition frequency fT 100 MHz VCE=-10V, IC=-10mA, f=100MHz 1
Collector output capacitance Cob 5 pF VCB=-10V, IE=0, f=1MHz 1
Collector-base voltage VCBO -180 V 1
Collector-emitter voltage VCEO -160 V 1
Emitter-base voltage VEBO -6 V 1
Collector current, continuous IC -600 mA 1
Collector power dissipation PC 300 mW 1
Junction temperature Tj 150 ℃ 1
Storage temperature Tstg -55 150 ℃ 1
Thermal resistance junction to ambient RθJA 625 ℃/W 1

CAD (KiCad official)

  • Symbol: MMBT5401DW
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: mmbt5401dw-etched.step / mmbt5401dw-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt5401dw.step / mmbt5401dw.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Shikues datasheet (3 pp, sha256 6dceb77a23edddd6, retrieved 2026-11-04, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF