component
MMBT5401 100-200
Public Made by Adomby adom
GME(银河微电) Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| mmbt5401-100-200-etched.glb | 17d ago |
| mmbt5401-100-200-etched.step | 17d ago |
| mmbt5401-100-200-hero.glb | 17d ago |
| mmbt5401-100-200-hero.overlay.json | 17d ago |
| mmbt5401-100-200.glb | 17d ago |
| mmbt5401-100-200.kicad_mod | 17d ago |
| mmbt5401-100-200.kicad_sym | 17d ago |
| mmbt5401-100-200.lbr | 17d ago |
| mmbt5401-100-200.step | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
MMBT5401 100-200
GME(银河微电) · Bipolar (BJT) · SOT-23
MMBT5401 100-200 from GME(银河微电), in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the PNP transistor; VEBO max -5 V and IEBO max -50 nA at VEB = -3V. |
| 2 | E | passive | Emitter of the PNP transistor; emitter-base breakdown voltage min -5 V at IE = -10uA. |
| 3 | C | passive | Collector of the PNP transistor; VCBO -160 V, VCEO -150 V, continuous IC -0.6 A (peak -0.8 A). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GME(银河微电) |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| hFE DC current gain (grade 100-200) | hFE | 100 | 200 | - | VCE = -5V, IC = -10mA | 2 | |
| Current-Gain-Bandwidth Product | fT | 100 | 300 | MHz | IC = -10mA, VCE = -10V, f = 100MHz | 2 | |
| Collector-Base Breakdown Voltage | V(BR)CBO | -160 | V | IC = -100μA, IE = 0 | 2 | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -150 | V | IC = -1mA, IB = 0 | 2 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5 | V | IE = -10μA, IC = 0 | 2 | ||
| Collector Cut-off Current | ICBO | -50 | nA | VCB = -120V, IE = 0 | 2 | ||
| Emitter Cut-off Current | IEBO | -50 | nA | VEB = -3V, IC = 0 | 2 | ||
| Collector-emitter Saturation Voltage | VCE(sat) | -0.2 | V | IC = -10mA, IB = -1mA | 2 | ||
| Collector-emitter Saturation Voltage | VCE(sat) | -0.5 | V | IC = -50mA, IB = -5mA | 2 | ||
| Base-emitter Saturation Voltage | VBE(sat) | -1 | V | IC = -10mA, IB = -1mA | 2 | ||
| Collector-base Output Capacitance | Ccbo | 6 | pF | VCB = -10V, f = 1MHz, IE = 0 | 2 | ||
| Collector-Base Voltage | VCBO | -160 | V | 1 | |||
| Collector-Emitter Breakdown Voltage | VCEO | -150 | V | 1 | |||
| Emitter-Base Breakdown Voltage | VEBO | -5 | V | 1 | |||
| Collector Current (Continuous) | IC | -0.6 | A | 1 | |||
| Collector Current (Peak) | ICM | -0.8 | A | 1 | |||
| Power Dissipation | PD | 0.35 | W | Note 1: surface mounted on 15mm15mm1mm FR4-epoxy P.C.B | 1 | ||
| Junction Temperature Range | TJ | -55 | 150 | °C | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance Junction-to-Air | RθJA | 315 | °C/W | Note 1: surface mounted on 15mm15mm1mm FR4-epoxy P.C.B | 1 | ||
| Thermal Resistance Junction-to-Case | RθJC | 185 | °C/W | Note 1: surface mounted on 15mm15mm1mm FR4-epoxy P.C.B | 1 | ||
| Thermal Resistance Junction-to-Lead | RθJL | 126 | °C/W | Note 1: surface mounted on 15mm15mm1mm FR4-epoxy P.C.B | 1 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | Terminals: Tin-plated; solderability per MIL-STD-202, Method 208 SOT-23 | 1 |
CAD (KiCad official)
- Symbol:
MMBT5401 100-200 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
mmbt5401-100-200-etched.step/mmbt5401-100-200-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmbt5401-100-200.step/mmbt5401-100-200.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GME(银河微电) datasheet (4 pp, sha256
cc1d840e7e26a92a, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).