# MMBT5089

**Shikues** · Bipolar Transistors - BJT · SOT-23

MMBT5089 from Shikues, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the MMBT5089 NPN silicon epitaxial planar transistor, used for switching and AF amplifier applications; the datasheet gives no pin-specific voltage or current limit. |
| 2 | EMITTER | passive | Emitter terminal of the MMBT5089 NPN transistor; the datasheet gives no pin-specific voltage or current limit for this pin. |
| 3 | COLLECTOR | passive | Collector terminal of the MMBT5089 NPN transistor; the datasheet gives no pin-specific voltage or current limit for this pin, only device-level maximum ratings (collector current -continuous 100 mA). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Shikues |
| Package | SOT-23 |
| Category | Transistors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter saturation voltage | VCE(sat) |  |  | 0.5 | V | IC=10mA, IB=1mA | 1 |
| Collector cut-off current | ICBO |  |  | 50 | nA | VCB=15V, IE=0 | 1 |
| Emitter cut-off current | IEBO |  |  | 50 | nA | VEB=3V | 1 |
| Collector-base breakdown voltage | V(BR)CBO | 30 |  |  | V | IC=100uA, IE=0 | 1 |
| Collector-emitter breakdown voltage | V(BR)CEO | 25 |  |  | V | IC=1mA, IB=0 | 1 |
| Emitter-base breakdown voltage | V(BR)EBO | 2.5 |  |  | V | IE=100uA, IC=0 | 1 |
| DC current gain | hFE | 400 |  | 1200 |  | VCE=5V, IC=0.1mA | 1 |
| DC current gain | hFE | 450 |  |  |  | VCE=5V, IC=1mA | 1 |
| DC current gain | hFE | 400 |  |  |  | VCE=5V, IC=10mA | 1 |
| Transition frequency | fT | 50 |  |  | MHz | VCE=5V, IC=0.5mA | 1 |
| Collector base capacitance | Ccb |  |  | 4 | pF | VCB=5V, IE=0, f=100kHz | 1 |
| Emitter base capacitance | Ceb |  |  | 10 | pF | VCB=0.5V, IE=0, f=100kHz | 1 |
| Noise figure | NF |  |  | 2 | dB | VCE=5V, IC=100uA, Rs=10kΩ, f=10Hz to 15.7kHz | 1 |
| Collector-base voltage | VCBO |  |  | 30 | V | TA=25℃ | 1 |
| Collector-emitter voltage | VCEO |  |  | 25 | V | TA=25℃ | 1 |
| Emitter-base voltage | VEBO |  |  | 4.5 | V | TA=25℃ | 1 |
| Collector current, continuous | IC |  |  | 100 | mA | TA=25℃ | 1 |
| Junction temperature | Tj |  |  | 150 | ℃ |  | 1 |
| Storage temperature | Tstg | -55 |  | 150 | ℃ |  | 1 |
| Thermal resistance, junction to ambient air | RθJA |  | 357 |  | °C/W |  | 1 |

## CAD (KiCad official)

- Symbol: `MMBT5089`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `mmbt5089-etched.step` / `mmbt5089-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mmbt5089.step` / `mmbt5089.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Shikues datasheet](docs/mmbt5089-datasheet.pdf) (5 pp, sha256 `f0fbf39c3bf1da7d`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/mmbt5089-datasheet.pdf)