component
MMBT5089
Public Made by Adomby adom
Shikues Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMMBT5089
Shikues · Bipolar Transistors - BJT · SOT-23
MMBT5089 from Shikues, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the MMBT5089 NPN silicon epitaxial planar transistor, used for switching and AF amplifier applications; the datasheet gives no pin-specific voltage or current limit. |
| 2 | EMITTER | passive | Emitter terminal of the MMBT5089 NPN transistor; the datasheet gives no pin-specific voltage or current limit for this pin. |
| 3 | COLLECTOR | passive | Collector terminal of the MMBT5089 NPN transistor; the datasheet gives no pin-specific voltage or current limit for this pin, only device-level maximum ratings (collector current -continuous 100 mA). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shikues |
| Package | SOT-23 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter saturation voltage | VCE(sat) | 0.5 | V | IC=10mA, IB=1mA | 1 | ||
| Collector cut-off current | ICBO | 50 | nA | VCB=15V, IE=0 | 1 | ||
| Emitter cut-off current | IEBO | 50 | nA | VEB=3V | 1 | ||
| Collector-base breakdown voltage | V(BR)CBO | 30 | V | IC=100uA, IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 25 | V | IC=1mA, IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 2.5 | V | IE=100uA, IC=0 | 1 | ||
| DC current gain | hFE | 400 | 1200 | VCE=5V, IC=0.1mA | 1 | ||
| DC current gain | hFE | 450 | VCE=5V, IC=1mA | 1 | |||
| DC current gain | hFE | 400 | VCE=5V, IC=10mA | 1 | |||
| Transition frequency | fT | 50 | MHz | VCE=5V, IC=0.5mA | 1 | ||
| Collector base capacitance | Ccb | 4 | pF | VCB=5V, IE=0, f=100kHz | 1 | ||
| Emitter base capacitance | Ceb | 10 | pF | VCB=0.5V, IE=0, f=100kHz | 1 | ||
| Noise figure | NF | 2 | dB | VCE=5V, IC=100uA, Rs=10kΩ, f=10Hz to 15.7kHz | 1 | ||
| Collector-base voltage | VCBO | 30 | V | TA=25℃ | 1 | ||
| Collector-emitter voltage | VCEO | 25 | V | TA=25℃ | 1 | ||
| Emitter-base voltage | VEBO | 4.5 | V | TA=25℃ | 1 | ||
| Collector current, continuous | IC | 100 | mA | TA=25℃ | 1 | ||
| Junction temperature | Tj | 150 | ℃ | 1 | |||
| Storage temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal resistance, junction to ambient air | RθJA | 357 | °C/W | 1 |
CAD (KiCad official)
- Symbol:
MMBT5089 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
mmbt5089-etched.step/mmbt5089-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmbt5089.step/mmbt5089.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shikues datasheet (5 pp, sha256
f0fbf39c3bf1da7d, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).