# MMBT4403LT1

**LGE** · Bipolar (BJT) · SOT-23

MMBT4403LT1 from LGE, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the PNP transistor; the datasheet gives base cut-off current IBL of -0.1 µA max at VCE=-35V, VBE=-0.4V. |
| 2 | EMITTER | passive | Emitter terminal of the PNP transistor; the emitter-base breakdown voltage V(BR)EBO is -5 V min at IE=-100µA, IC=0. |
| 3 | COLLECTOR | passive | Collector terminal of the PNP transistor; the datasheet rates collector current IC at -0.6 A DC and collector-emitter voltage VCEO at -40 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | LGE |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| DC current gain (VCE=-1V, IC=-0.1mA) | hFE | 30 |  |  |  | VCE = -1V; IC= -0.1mA | 2 |
| DC current gain (VCE=-1V, IC=-1mA) | hFE | 60 |  |  |  | VCE = -1V;IC = -1mA | 2 |
| DC current gain (VCE=-1V, IC=-10mA) | hFE | 100 |  |  |  | VCE = -1V;IC = -10mA | 2 |
| DC current gain (VCE=-2V, IC=-150mA) | hFE | 100 |  | 300 |  | VCE = -2V;IC = -150mA | 2 |
| DC current gain (VCE=-2V, IC=-500mA) | hFE | 20 |  |  |  | VCE = -2V;IC = -500mA | 2 |
| Collector-base breakdown voltage | V(BR)CBO | -40 |  |  | V | IC=-100μA,IE=0 | 2 |
| Collector-emitter breakdown voltage | V(BR)CEO | -40 |  |  | V | IC=-1mA,IB=0 | 2 |
| Emitter-base breakdown voltage | V(BR)EBO | -5 |  |  | V | IE=-100μA,IC=0 | 2 |
| Collector cut-off current | ICEX |  |  | -0.1 | μA | VCE=-35V,VBE=0.4V | 2 |
| Base cut-off current | IBL |  |  | -0.1 | μA | VCE=-35V,VBE=-0.4V | 2 |
| Collector-emitter saturation voltage (IC=-150mA) | VCE(sat) |  |  | -0.4 | V | IC = -150mA, IB = -15mA | 2 |
| Collector-emitter saturation voltage (IC=-500mA) | VCE(sat) |  |  | -0.75 | V | IC = -500mA, IB = -50mA | 2 |
| Base-emitter saturation voltage (IC=-150mA) | VBE(sat) | -0.75 |  | -0.95 | V | IC = -150mA; IB = -15mA | 2 |
| Base-emitter saturation voltage (IC=-500mA) | VBE(sat) |  |  | -1.3 | V | IC = -500mA; IB = -50mA | 2 |
| Transition frequency | fT | 200 |  |  | MHz | IC = -20mA; VCE= -10V; f =100MHz | 2 |
| Collector-base voltage | VCBO | -40 |  |  | V | Ta=25℃ | 1 |
| Collector-emitter voltage | VCEO | -40 |  |  | V | Ta=25℃ | 1 |
| Emitter-base voltage | VEBO | -5 |  |  | V | Ta=25℃ | 1 |
| Collector current (DC) | IC | -0.6 |  |  | A | Ta=25℃ | 1 |
| Collector dissipation | PC |  |  | 0.35 | W | Ta=25℃ | 1 |
| Junction and storage temperature | Tj ,Tstg | -55 |  | 150 | °C |  | 1 |
| Thermal resistance, junction to ambient | RθJA |  |  | 357 | ℃/W |  | 1 |

## CAD (KiCad official)

- Symbol: `MMBT4403LT1`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `mmbt4403lt1-etched.step` / `mmbt4403lt1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mmbt4403lt1.step` / `mmbt4403lt1.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [LGE datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588916427843096576) (3 pp, sha256 `63187b5e884882a2`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/mmbt4403lt1-datasheet.pdf)