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MMBT4403LT1

Public Made by Adom

by adom

LGE Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Datasheet

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Contents

README

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MMBT4403LT1

LGE · Bipolar (BJT) · SOT-23

MMBT4403LT1 from LGE, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the PNP transistor; the datasheet gives base cut-off current IBL of -0.1 µA max at VCE=-35V, VBE=-0.4V.
2 EMITTER passive Emitter terminal of the PNP transistor; the emitter-base breakdown voltage V(BR)EBO is -5 V min at IE=-100µA, IC=0.
3 COLLECTOR passive Collector terminal of the PNP transistor; the datasheet rates collector current IC at -0.6 A DC and collector-emitter voltage VCEO at -40 V.

Key specifications

Parameter Value
Manufacturer LGE
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
DC current gain (VCE=-1V, IC=-0.1mA) hFE 30 VCE = -1V; IC= -0.1mA 2
DC current gain (VCE=-1V, IC=-1mA) hFE 60 VCE = -1V;IC = -1mA 2
DC current gain (VCE=-1V, IC=-10mA) hFE 100 VCE = -1V;IC = -10mA 2
DC current gain (VCE=-2V, IC=-150mA) hFE 100 300 VCE = -2V;IC = -150mA 2
DC current gain (VCE=-2V, IC=-500mA) hFE 20 VCE = -2V;IC = -500mA 2
Collector-base breakdown voltage V(BR)CBO -40 V IC=-100μA,IE=0 2
Collector-emitter breakdown voltage V(BR)CEO -40 V IC=-1mA,IB=0 2
Emitter-base breakdown voltage V(BR)EBO -5 V IE=-100μA,IC=0 2
Collector cut-off current ICEX -0.1 μA VCE=-35V,VBE=0.4V 2
Base cut-off current IBL -0.1 μA VCE=-35V,VBE=-0.4V 2
Collector-emitter saturation voltage (IC=-150mA) VCE(sat) -0.4 V IC = -150mA, IB = -15mA 2
Collector-emitter saturation voltage (IC=-500mA) VCE(sat) -0.75 V IC = -500mA, IB = -50mA 2
Base-emitter saturation voltage (IC=-150mA) VBE(sat) -0.75 -0.95 V IC = -150mA; IB = -15mA 2
Base-emitter saturation voltage (IC=-500mA) VBE(sat) -1.3 V IC = -500mA; IB = -50mA 2
Transition frequency fT 200 MHz IC = -20mA; VCE= -10V; f =100MHz 2
Collector-base voltage VCBO -40 V Ta=25℃ 1
Collector-emitter voltage VCEO -40 V Ta=25℃ 1
Emitter-base voltage VEBO -5 V Ta=25℃ 1
Collector current (DC) IC -0.6 A Ta=25℃ 1
Collector dissipation PC 0.35 W Ta=25℃ 1
Junction and storage temperature Tj ,Tstg -55 150 °C 1
Thermal resistance, junction to ambient RθJA 357 ℃/W 1

CAD (KiCad official)

  • Symbol: MMBT4403LT1
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbt4403lt1-etched.step / mmbt4403lt1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt4403lt1.step / mmbt4403lt1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: LGE datasheet (3 pp, sha256 63187b5e884882a2, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF