component

MMBT4140

Public Made by Adom

by adom

EIC Semicon Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MMBT4140

EIC Semicon · Bipolar Transistors - BJT · SOT-23

MMBT4140 from EIC Semicon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base; emitter-base voltage VEBO max 5 V and peak base current IBM max 1 A.
2 E passive Emitter; the datasheet gives emitter-base voltage VEBO max 5 V.
3 C passive Collector; VCEO 30 V, VCBO 40 V, DC collector current IC 1 A and peak ICM 2 A maximum.

Key specifications

Parameter Value
Manufacturer EIC Semicon
Package SOT-23
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector Base Voltage VCBO 40 V Ta = 25 °C 1
Collector Emitter Voltage VCEO 30 V Ta = 25 °C 1
Emitter Base Voltage VEBO 5 V Ta = 25 °C 1
Collector Current (DC) IC 1 A Ta = 25 °C 1
Peak Collector Current ICM 2 A Ta = 25 °C 1
Peak Base Current IBM 1 A Ta = 25 °C 1
Total Power Dissipation (standard footprint) Ptot 200 mW Device mounted on PCB; single sided copper; tinplated; standard footprint 1
Total Power Dissipation (1 cm2 collector pad) Ptot 450 mW Device mounted on PCB; single sided copper; tinplated; mounting pad for collector 1cm2 1
Junction Temperature Tj 150 °C 1
Storage Temperature Range Tstg -65 150 °C 1
DC Current Gain hFE 300 VCE = 5 V, IC = 1 mA 2
DC Current Gain hFE 300 900 VCE = 5 V, IC = 500 mA 2
DC Current Gain hFE 200 VCE = 5 V, IC = 1 A 2
Collector Base Cutoff Current ICBO 100 nA VCB = 40 V 2
Collector Emitter Cutoff Current ICEO 100 nA VCE = 30 V 2
Emitter Base Cutoff Current IEBO 100 nA VEB = 5 V 2
Collector Emitter Saturation Voltage VCE(sat) 200 mV IC = 100 mA, IB = 1 mA 2
Collector Emitter Saturation Voltage VCE(sat) 250 mV IC = 500 mA, IB = 50 mA 2
Collector Emitter Saturation Voltage VCE(sat) 500 mV IC = 1 A, IB = 100 mA 2
Base Emitter Saturation Voltage VBE(sat) 1.2 V IC = 1 A, IB = 100 mA 2
Base Emitter Turn-on Voltage VBE(on) 1.1 V VCE = 5 V, IC = 1 A 2
Transition Frequency fT 150 MHz VCE = 10 V, IC = 50 mA, f = 100 MHz 2
Collector Capacitance Cob 10 pF VCB = 10 V, f = 1 MHz 2

CAD (KiCad official)

  • Symbol: MMBT4140
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbt4140-etched.step / mmbt4140-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt4140.step / mmbt4140.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: EIC Semicon datasheet (2 pp, sha256 72c769bcd97bd846, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF