component
MMBT4140
Public Made by Adomby adom
EIC Semicon Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMMBT4140
EIC Semicon · Bipolar Transistors - BJT · SOT-23
MMBT4140 from EIC Semicon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base; emitter-base voltage VEBO max 5 V and peak base current IBM max 1 A. |
| 2 | E | passive | Emitter; the datasheet gives emitter-base voltage VEBO max 5 V. |
| 3 | C | passive | Collector; VCEO 30 V, VCBO 40 V, DC collector current IC 1 A and peak ICM 2 A maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | EIC Semicon |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector Base Voltage | VCBO | 40 | V | Ta = 25 °C | 1 | ||
| Collector Emitter Voltage | VCEO | 30 | V | Ta = 25 °C | 1 | ||
| Emitter Base Voltage | VEBO | 5 | V | Ta = 25 °C | 1 | ||
| Collector Current (DC) | IC | 1 | A | Ta = 25 °C | 1 | ||
| Peak Collector Current | ICM | 2 | A | Ta = 25 °C | 1 | ||
| Peak Base Current | IBM | 1 | A | Ta = 25 °C | 1 | ||
| Total Power Dissipation (standard footprint) | Ptot | 200 | mW | Device mounted on PCB; single sided copper; tinplated; standard footprint | 1 | ||
| Total Power Dissipation (1 cm2 collector pad) | Ptot | 450 | mW | Device mounted on PCB; single sided copper; tinplated; mounting pad for collector 1cm2 | 1 | ||
| Junction Temperature | Tj | 150 | °C | 1 | |||
| Storage Temperature Range | Tstg | -65 | 150 | °C | 1 | ||
| DC Current Gain | hFE | 300 | VCE = 5 V, IC = 1 mA | 2 | |||
| DC Current Gain | hFE | 300 | 900 | VCE = 5 V, IC = 500 mA | 2 | ||
| DC Current Gain | hFE | 200 | VCE = 5 V, IC = 1 A | 2 | |||
| Collector Base Cutoff Current | ICBO | 100 | nA | VCB = 40 V | 2 | ||
| Collector Emitter Cutoff Current | ICEO | 100 | nA | VCE = 30 V | 2 | ||
| Emitter Base Cutoff Current | IEBO | 100 | nA | VEB = 5 V | 2 | ||
| Collector Emitter Saturation Voltage | VCE(sat) | 200 | mV | IC = 100 mA, IB = 1 mA | 2 | ||
| Collector Emitter Saturation Voltage | VCE(sat) | 250 | mV | IC = 500 mA, IB = 50 mA | 2 | ||
| Collector Emitter Saturation Voltage | VCE(sat) | 500 | mV | IC = 1 A, IB = 100 mA | 2 | ||
| Base Emitter Saturation Voltage | VBE(sat) | 1.2 | V | IC = 1 A, IB = 100 mA | 2 | ||
| Base Emitter Turn-on Voltage | VBE(on) | 1.1 | V | VCE = 5 V, IC = 1 A | 2 | ||
| Transition Frequency | fT | 150 | MHz | VCE = 10 V, IC = 50 mA, f = 100 MHz | 2 | ||
| Collector Capacitance | Cob | 10 | pF | VCB = 10 V, f = 1 MHz | 2 |
CAD (KiCad official)
- Symbol:
MMBT4140 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
mmbt4140-etched.step/mmbt4140-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmbt4140.step/mmbt4140.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: EIC Semicon datasheet (2 pp, sha256
72c769bcd97bd846, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).