component
MMBT4124LT1G
Public Made by Adomby adom
onsemi Bipolar (BJT), SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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MMBT4124LT1G
onsemi · Bipolar (BJT) · SOT-23-3
MMBT4124LT1G from onsemi, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN general-purpose transistor; the datasheet specifies emitter-base voltage VEBO of 5.0 Vdc maximum and emitter-base breakdown V(BR)EBO of 5.0 Vdc minimum. |
| 2 | EMITTER | passive | Emitter terminal of the NPN general-purpose transistor; collector-emitter voltage is limited to VCEO 25 Vdc and continuous collector current to 200 mAdc. |
| 3 | COLLECTOR | passive | Collector terminal of the NPN general-purpose transistor; collector-base voltage is limited to VCBO 30 Vdc and continuous collector current to 200 mAdc. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector−Emitter Breakdown Voltage | V(BR)CEO | 25 | Vdc | IC = 1.0 mAdc, IE = 0 | 2 | ||
| Collector−Base Breakdown Voltage | V(BR)CBO | 30 | Vdc | IC = 10 Adc, IE = 0 | 2 | ||
| Emitter−Base Breakdown Voltage | V(BR)EBO | 5 | Vdc | IE = 10 Adc, IC = 0 | 2 | ||
| Collector Cutoff Current | ICBO | 50 | nAdc | VCB = 20 Vdc, IE = 0 | 2 | ||
| Emitter Cutoff Current | IEBO | 50 | nAdc | VEB = 3.0 Vdc, IC = 0 | 2 | ||
| DC Current Gain | hFE | 120 | 360 | − | IC = 2.0 mAdc, VCE = 1.0 Vdc | 2 | |
| DC Current Gain | hFE | 60 | − | IC = 50 mAdc, VCE = 1.0 Vdc | 2 | ||
| Collector−Emitter Saturation Voltage | VCE(sat) | 0.3 | Vdc | IC = 50 mAdc, IB = 5.0 mAdc | 2 | ||
| Base−Emitter Saturation Voltage | VBE(sat) | 0.95 | Vdc | IC = 50 mAdc, IB = 5.0 mAdc | 2 | ||
| Current−Gain − Bandwidth Product | fT | 300 | MHz | IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz | 2 | ||
| Input Capacitance | Cibo | 8 | pF | VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz | 2 | ||
| Collector−Base Capacitance | Ccb | 4 | pF | IE = 0, VCB = 5.0 V, f = 1.0 MHz | 2 | ||
| Small−Signal Current Gain | hfe | 120 | 480 | − | IC = 2.0 mAdc, VCE = 10 Vdc, RS = 10 k, f = 1.0 kHz | 2 | |
| Current Gain − High Frequency | /hfe/ | 3 | − | IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz | 2 | ||
| Current Gain − High Frequency | /hfe/ | 120 | 480 | − | IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz | 2 | |
| Noise Figure | NF | 5 | dB | IC = 100 Adc, VCE = 5.0 Vdc, RS = 1.0 k, f = 1.0 kHz | 2 | ||
| Collector−Emitter Voltage | VCEO | 25 | Vdc | 1 | |||
| Collector−Base Voltage | VCBO | 30 | Vdc | 1 | |||
| Emitter−Base Voltage | VEBO | 5 | Vdc | 1 | |||
| Collector Current − Continuous | IC | 200 | mAdc | 1 | |||
| Total Device Dissipation, FR−5 Board | PD | 225 | W | FR−5 Board (Note 1) @ TA = 25°C | 1 | ||
| Thermal Resistance, Junction−to−Ambient, FR−5 Board | RJA | 556 | °C/W | FR−5 Board (Note 1) | 1 | ||
| Total Device Dissipation, Alumina Substrate | PD | 300 | W | Alumina Substrate (Note 2) @ TA = 25°C | 1 | ||
| Thermal Resistance, Junction−to−Ambient, Alumina Substrate | RJA | 417 | °C/W | Alumina Substrate (Note 2) | 1 | ||
| Junction and Storage Temperature | TJ, Tstg | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
MMBT4124LT1G - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3 (KiCad packages3D, STEP)
- 3D model files:
mmbt4124lt1g-etched.step/mmbt4124lt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmbt4124lt1g.step/mmbt4124lt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (7 pp, sha256
5da228e2bb1af360, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MMBT4124LT1G
**onsemi** · Bipolar (BJT) · SOT-23-3
MMBT4124LT1G from onsemi, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN general-purpose transistor; the datasheet specifies emitter-base voltage VEBO of 5.0 Vdc maximum and emitter-base breakdown V(BR)EBO of 5.0 Vdc minimum. |
| 2 | EMITTER | passive | Emitter terminal of the NPN general-purpose transistor; collector-emitter voltage is limited to VCEO 25 Vdc and continuous collector current to 200 mAdc. |
| 3 | COLLECTOR | passive | Collector terminal of the NPN general-purpose transistor; collector-base voltage is limited to VCBO 30 Vdc and continuous collector current to 200 mAdc. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector−Emitter Breakdown Voltage | V(BR)CEO | 25 | | | Vdc | IC = 1.0 mAdc, IE = 0 | 2 |
| Collector−Base Breakdown Voltage | V(BR)CBO | 30 | | | Vdc | IC = 10 Adc, IE = 0 | 2 |
| Emitter−Base Breakdown Voltage | V(BR)EBO | 5 | | | Vdc | IE = 10 Adc, IC = 0 | 2 |
| Collector Cutoff Current | ICBO | | | 50 | nAdc | VCB = 20 Vdc, IE = 0 | 2 |
| Emitter Cutoff Current | IEBO | | | 50 | nAdc | VEB = 3.0 Vdc, IC = 0 | 2 |
| DC Current Gain | hFE | 120 | | 360 | − | IC = 2.0 mAdc, VCE = 1.0 Vdc | 2 |
| DC Current Gain | hFE | 60 | | | − | IC = 50 mAdc, VCE = 1.0 Vdc | 2 |
| Collector−Emitter Saturation Voltage | VCE(sat) | | | 0.3 | Vdc | IC = 50 mAdc, IB = 5.0 mAdc | 2 |
| Base−Emitter Saturation Voltage | VBE(sat) | | | 0.95 | Vdc | IC = 50 mAdc, IB = 5.0 mAdc | 2 |
| Current−Gain − Bandwidth Product | fT | 300 | | | MHz | IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz | 2 |
| Input Capacitance | Cibo | | | 8 | pF | VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz | 2 |
| Collector−Base Capacitance | Ccb | | | 4 | pF | IE = 0, VCB = 5.0 V, f = 1.0 MHz | 2 |
| Small−Signal Current Gain | hfe | 120 | | 480 | − | IC = 2.0 mAdc, VCE = 10 Vdc, RS = 10 k, f = 1.0 kHz | 2 |
| Current Gain − High Frequency | /hfe/ | 3 | | | − | IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz | 2 |
| Current Gain − High Frequency | /hfe/ | 120 | | 480 | − | IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz | 2 |
| Noise Figure | NF | | | 5 | dB | IC = 100 Adc, VCE = 5.0 Vdc, RS = 1.0 k, f = 1.0 kHz | 2 |
| Collector−Emitter Voltage | VCEO | | | 25 | Vdc | | 1 |
| Collector−Base Voltage | VCBO | | | 30 | Vdc | | 1 |
| Emitter−Base Voltage | VEBO | | | 5 | Vdc | | 1 |
| Collector Current − Continuous | IC | | | 200 | mAdc | | 1 |
| Total Device Dissipation, FR−5 Board | PD | | | 225 | W | FR−5 Board (Note 1) @ TA = 25°C | 1 |
| Thermal Resistance, Junction−to−Ambient, FR−5 Board | RJA | | | 556 | °C/W | FR−5 Board (Note 1) | 1 |
| Total Device Dissipation, Alumina Substrate | PD | | | 300 | W | Alumina Substrate (Note 2) @ TA = 25°C | 1 |
| Thermal Resistance, Junction−to−Ambient, Alumina Substrate | RJA | | | 417 | °C/W | Alumina Substrate (Note 2) | 1 |
| Junction and Storage Temperature | TJ, Tstg | -55 | | 150 | °C | | 1 |
## CAD (KiCad official)
- Symbol: `MMBT4124LT1G`
- Footprint: `Package_TO_SOT_SMD:SOT-23-3`
- 3D model: SOT-23-3 (KiCad packages3D, STEP)
- 3D model files: `mmbt4124lt1g-etched.step` / `mmbt4124lt1g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mmbt4124lt1g.step` / `mmbt4124lt1g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [onsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588928606727262208) (7 pp, sha256 `5da228e2bb1af360`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/mmbt4124lt1g-datasheet.pdf)