component

MMBT4124LT1G

Public Made by Adom

by adom

onsemi Bipolar (BJT), SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MMBT4124LT1G

onsemi · Bipolar (BJT) · SOT-23-3

MMBT4124LT1G from onsemi, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the NPN general-purpose transistor; the datasheet specifies emitter-base voltage VEBO of 5.0 Vdc maximum and emitter-base breakdown V(BR)EBO of 5.0 Vdc minimum.
2 EMITTER passive Emitter terminal of the NPN general-purpose transistor; collector-emitter voltage is limited to VCEO 25 Vdc and continuous collector current to 200 mAdc.
3 COLLECTOR passive Collector terminal of the NPN general-purpose transistor; collector-base voltage is limited to VCBO 30 Vdc and continuous collector current to 200 mAdc.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector−Emitter Breakdown Voltage V(BR)CEO 25 Vdc IC = 1.0 mAdc, IE = 0 2
Collector−Base Breakdown Voltage V(BR)CBO 30 Vdc IC = 10 Adc, IE = 0 2
Emitter−Base Breakdown Voltage V(BR)EBO 5 Vdc IE = 10 Adc, IC = 0 2
Collector Cutoff Current ICBO 50 nAdc VCB = 20 Vdc, IE = 0 2
Emitter Cutoff Current IEBO 50 nAdc VEB = 3.0 Vdc, IC = 0 2
DC Current Gain hFE 120 360 − IC = 2.0 mAdc, VCE = 1.0 Vdc 2
DC Current Gain hFE 60 − IC = 50 mAdc, VCE = 1.0 Vdc 2
Collector−Emitter Saturation Voltage VCE(sat) 0.3 Vdc IC = 50 mAdc, IB = 5.0 mAdc 2
Base−Emitter Saturation Voltage VBE(sat) 0.95 Vdc IC = 50 mAdc, IB = 5.0 mAdc 2
Current−Gain − Bandwidth Product fT 300 MHz IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz 2
Input Capacitance Cibo 8 pF VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz 2
Collector−Base Capacitance Ccb 4 pF IE = 0, VCB = 5.0 V, f = 1.0 MHz 2
Small−Signal Current Gain hfe 120 480 − IC = 2.0 mAdc, VCE = 10 Vdc, RS = 10 k, f = 1.0 kHz 2
Current Gain − High Frequency /hfe/ 3 − IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz 2
Current Gain − High Frequency /hfe/ 120 480 − IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz 2
Noise Figure NF 5 dB IC = 100 Adc, VCE = 5.0 Vdc, RS = 1.0 k, f = 1.0 kHz 2
Collector−Emitter Voltage VCEO 25 Vdc 1
Collector−Base Voltage VCBO 30 Vdc 1
Emitter−Base Voltage VEBO 5 Vdc 1
Collector Current − Continuous IC 200 mAdc 1
Total Device Dissipation, FR−5 Board PD 225 W FR−5 Board (Note 1) @ TA = 25°C 1
Thermal Resistance, Junction−to−Ambient, FR−5 Board RJA 556 °C/W FR−5 Board (Note 1) 1
Total Device Dissipation, Alumina Substrate PD 300 W Alumina Substrate (Note 2) @ TA = 25°C 1
Thermal Resistance, Junction−to−Ambient, Alumina Substrate RJA 417 °C/W Alumina Substrate (Note 2) 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1

CAD (KiCad official)

  • Symbol: MMBT4124LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3 (KiCad packages3D, STEP)
  • 3D model files: mmbt4124lt1g-etched.step / mmbt4124lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt4124lt1g.step / mmbt4124lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (7 pp, sha256 5da228e2bb1af360, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF