# MMBT3906Q-7-F

**Diodes Incorporated** · Bipolar (BJT) · SOT-23

MMBT3906Q-7-F from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the PNP transistor; the datasheet pin-out shows it at the bottom left in top view, and the device is rated for VEBO of -6.0 V and peak base current IBM of -100 mA. |
| 2 | E | passive | Emitter of the PNP transistor; the datasheet pin-out shows it at the bottom right in top view, and the emitter-base breakdown voltage BVEBO is -6.0 V minimum. |
| 3 | C | passive | Collector of the PNP transistor; the datasheet pin-out shows it as the single pin on the top side in top view, and it is rated for VCEO of -40 V and IC of -200 mA. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO |  |  | -40 | V |  | 2 |
| Collector-Emitter Voltage | VCEO |  |  | -40 | V |  | 2 |
| Emitter-Base Voltage | VEBO |  |  | -6 | V |  | 2 |
| Collector Current | IC |  |  | -200 | mA |  | 2 |
| Peak Collector Current | ICM |  |  | -200 | mA |  | 2 |
| Peak Base Current | IBM |  |  | -100 | mA |  | 2 |
| Power Dissipation | PD |  |  | 310 | mW | Note 6 (minimum pad layout) | 2 |
| Power Dissipation | PD |  |  | 350 | mW | Note 7 (15 mm x 15 mm 1oz copper) | 2 |
| Thermal Resistance, Junction to Ambient | RθJA |  |  | 403 | °C/W | Note 6 (minimum pad layout) | 2 |
| Thermal Resistance, Junction to Ambient | RθJA |  |  | 357 | °C/W | Note 7 (15 mm x 15 mm 1oz copper) | 2 |
| Thermal Resistance, Junction to Leads | RθJL |  |  | 350 | °C/W | Note 8 (junction to solder point) | 2 |
| Operating and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | °C |  | 2 |
| Electrostatic Discharge—Human Body Model | ESD HBM |  |  | 4000 | V | Note 9, JEDEC Class 3A | 2 |
| Electrostatic Discharge—Machine Model | ESD MM |  |  | 400 | V | Note 9, JEDEC Class C | 2 |
| Collector-Base Breakdown Voltage | BVCBO | -40 |  |  | V | IC = -100μA, IE = 0 | 4 |
| Collector-Emitter Breakdown Voltage | BVCEO | -40 |  |  | V | IC = -10mA, IB = 0 | 4 |
| Emitter-Base Breakdown Voltage | BVEBO | -6 |  |  | V | IE = -100μA, IC = 0 | 4 |
| Collector Cutoff Current | ICEV |  |  | -50 | nA | VCE = -30V, VBE = 3.0V | 4 |
| Emitter-Base Cutoff Current | IEBO |  |  | -50 | nA | VEB = -5V | 4 |
| DC Current Gain | hFE | 60 |  |  |  | IC = -100µA, VCE = -1.0V | 4 |
| DC Current Gain | hFE | 80 |  |  |  | IC = -1.0mA, VCE = -1.0V | 4 |
| DC Current Gain | hFE | 100 |  |  |  | IC = -10mA, VCE = -1.0V | 4 |
| DC Current Gain | hFE | 30 |  |  |  | IC = -100mA, VCE = -1.0V | 4 |
| DC Current Gain | hFE |  |  | 300 |  | IC = -100µA to -100mA, VCE = -1.0V | 4 |
| Collector-Emitter Saturation Voltage | VCE(sat) |  |  | -0.25 | V | IC = -10mA, IB = -1.0mA | 4 |
| Collector-Emitter Saturation Voltage | VCE(sat) |  |  | -0.4 | V | IC = -50mA, IB = -5.0mA | 4 |
| Base-Emitter Saturation Voltage | VBE(sat) | -0.65 |  |  | V | IC = -10mA, IB = -1.0mA | 4 |
| Base-Emitter Saturation Voltage | VBE(sat) |  |  | -0.85 | V | IC = -10mA, IB = -1.0mA | 4 |
| Base-Emitter Saturation Voltage | VBE(sat) |  |  | -0.95 | V | IC = -50mA, IB = -5.0mA | 4 |
| Output Capacitance | Cobo |  |  | 4.5 | pF | VCB = -5.0V, f = 1.0MHz, IE = 0 | 4 |
| Input Capacitance | Cibo |  |  | 10 | pF | VEB = -0.5V, f = 1.0MHz, IC = 0 | 4 |
| Input Impedance | hie | 2 |  |  | kΩ | VCE = 10V, IC = 1.0mA, f = 1.0kHz | 4 |
| Input Impedance | hie |  |  | 12 | kΩ | VCE = 10V, IC = 1.0mA, f = 1.0kHz | 4 |
| Voltage Feedback Ratio | hre | 0.1 |  |  | × 10-4 |  | 4 |
| Voltage Feedback Ratio | hre |  |  | 10 | × 10-4 |  | 4 |
| Small Signal Current Gain | hfe | 100 |  |  |  |  | 4 |
| Small Signal Current Gain | hfe |  |  | 400 |  |  | 4 |
| Output Admittance | hoe | 3 |  |  | μS |  | 4 |
| Output Admittance | hoe |  |  | 60 | μS |  | 4 |
| Current Gain-Bandwidth Product | fT | 250 |  |  | MHz | VCE = -20V, IC = -10mA, f = 100MHz | 4 |
| Noise Figure | NF |  |  | 4 | dB | VCE = -5.0V, IC = -100μA, RS = 1.0kΩ, f = 1.0kHz | 4 |
| Delay Time | td |  |  | 35 | ns | VCC = -3.0V, IC = -10mA, VBE(off) = 0.5V, IB1 = -1.0mA | 4 |
| Rise Time | tr |  |  | 35 | ns | VCC = -3.0V, IC = -10mA, VBE(off) = 0.5V, IB1 = -1.0mA | 4 |
| Storage Time | ts |  |  | 225 | ns | VCC = -3.0V, IC = -10mA, IB1 = IB2 = -1.0mA | 4 |
| Fall Time | tf |  |  | 75 | ns | VCC = -3.0V, IC = -10mA, IB1 = IB2 = -1.0mA | 4 |

## CAD (KiCad official)

- Symbol: `MMBT3906Q-7-F`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `mmbt3906q-7-f-etched.step` / `mmbt3906q-7-f-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mmbt3906q-7-f.step` / `mmbt3906q-7-f.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Diodes Incorporated datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8560093130894188544) (7 pp, sha256 `a1cb87cc10d8aaf8`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/mmbt3906q-7-f-datasheet.pdf)