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MMBT3906Q-7-F

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Diodes Incorporated Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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docs Publish 0.1.0 · Ray 21d ago
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mmbt3906q-7-f-etched.glb mmbt3906q-7-f: factory component page (tier=lcsc) · Ray 21d ago
mmbt3906q-7-f-etched.step mmbt3906q-7-f: factory component page (tier=lcsc) · Ray 21d ago
mmbt3906q-7-f-hero.glb mmbt3906q-7-f: hero GLB from the etched model (keeps the MPN mark) · Ray 21d ago
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package.json Publish 0.1.0 · Ray 21d ago
page.json mmbt3906q-7-f: specified limits as data (metadata.characteristics, 45 rows from the datasheet) · Ray 16d ago
README.md mmbt3906q-7-f: specified limits as data (metadata.characteristics, 45 rows from the datasheet) · Ray 16d ago

MMBT3906Q-7-F

Diodes Incorporated · Bipolar (BJT) · SOT-23

MMBT3906Q-7-F from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the PNP transistor; the datasheet pin-out shows it at the bottom left in top view, and the device is rated for VEBO of -6.0 V and peak base current IBM of -100 mA.
2 E passive Emitter of the PNP transistor; the datasheet pin-out shows it at the bottom right in top view, and the emitter-base breakdown voltage BVEBO is -6.0 V minimum.
3 C passive Collector of the PNP transistor; the datasheet pin-out shows it as the single pin on the top side in top view, and it is rated for VCEO of -40 V and IC of -200 mA.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO -40 V 2
Collector-Emitter Voltage VCEO -40 V 2
Emitter-Base Voltage VEBO -6 V 2
Collector Current IC -200 mA 2
Peak Collector Current ICM -200 mA 2
Peak Base Current IBM -100 mA 2
Power Dissipation PD 310 mW Note 6 (minimum pad layout) 2
Power Dissipation PD 350 mW Note 7 (15 mm x 15 mm 1oz copper) 2
Thermal Resistance, Junction to Ambient RθJA 403 °C/W Note 6 (minimum pad layout) 2
Thermal Resistance, Junction to Ambient RθJA 357 °C/W Note 7 (15 mm x 15 mm 1oz copper) 2
Thermal Resistance, Junction to Leads RθJL 350 °C/W Note 8 (junction to solder point) 2
Operating and Storage Temperature Range TJ,TSTG -55 150 °C 2
Electrostatic Discharge—Human Body Model ESD HBM 4000 V Note 9, JEDEC Class 3A 2
Electrostatic Discharge—Machine Model ESD MM 400 V Note 9, JEDEC Class C 2
Collector-Base Breakdown Voltage BVCBO -40 V IC = -100μA, IE = 0 4
Collector-Emitter Breakdown Voltage BVCEO -40 V IC = -10mA, IB = 0 4
Emitter-Base Breakdown Voltage BVEBO -6 V IE = -100μA, IC = 0 4
Collector Cutoff Current ICEV -50 nA VCE = -30V, VBE = 3.0V 4
Emitter-Base Cutoff Current IEBO -50 nA VEB = -5V 4
DC Current Gain hFE 60 IC = -100µA, VCE = -1.0V 4
DC Current Gain hFE 80 IC = -1.0mA, VCE = -1.0V 4
DC Current Gain hFE 100 IC = -10mA, VCE = -1.0V 4
DC Current Gain hFE 30 IC = -100mA, VCE = -1.0V 4
DC Current Gain hFE 300 IC = -100µA to -100mA, VCE = -1.0V 4
Collector-Emitter Saturation Voltage VCE(sat) -0.25 V IC = -10mA, IB = -1.0mA 4
Collector-Emitter Saturation Voltage VCE(sat) -0.4 V IC = -50mA, IB = -5.0mA 4
Base-Emitter Saturation Voltage VBE(sat) -0.65 V IC = -10mA, IB = -1.0mA 4
Base-Emitter Saturation Voltage VBE(sat) -0.85 V IC = -10mA, IB = -1.0mA 4
Base-Emitter Saturation Voltage VBE(sat) -0.95 V IC = -50mA, IB = -5.0mA 4
Output Capacitance Cobo 4.5 pF VCB = -5.0V, f = 1.0MHz, IE = 0 4
Input Capacitance Cibo 10 pF VEB = -0.5V, f = 1.0MHz, IC = 0 4
Input Impedance hie 2 kΩ VCE = 10V, IC = 1.0mA, f = 1.0kHz 4
Input Impedance hie 12 kΩ VCE = 10V, IC = 1.0mA, f = 1.0kHz 4
Voltage Feedback Ratio hre 0.1 × 10-4 4
Voltage Feedback Ratio hre 10 × 10-4 4
Small Signal Current Gain hfe 100 4
Small Signal Current Gain hfe 400 4
Output Admittance hoe 3 μS 4
Output Admittance hoe 60 μS 4
Current Gain-Bandwidth Product fT 250 MHz VCE = -20V, IC = -10mA, f = 100MHz 4
Noise Figure NF 4 dB VCE = -5.0V, IC = -100μA, RS = 1.0kΩ, f = 1.0kHz 4
Delay Time td 35 ns VCC = -3.0V, IC = -10mA, VBE(off) = 0.5V, IB1 = -1.0mA 4
Rise Time tr 35 ns VCC = -3.0V, IC = -10mA, VBE(off) = 0.5V, IB1 = -1.0mA 4
Storage Time ts 225 ns VCC = -3.0V, IC = -10mA, IB1 = IB2 = -1.0mA 4
Fall Time tf 75 ns VCC = -3.0V, IC = -10mA, IB1 = IB2 = -1.0mA 4

CAD (KiCad official)

  • Symbol: MMBT3906Q-7-F
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbt3906q-7-f-etched.step / mmbt3906q-7-f-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt3906q-7-f.step / mmbt3906q-7-f.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 a1cb87cc10d8aaf8, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF