# MMBT3906

**Diodes Incorporated** · Bipolar Transistor (BJT) · SOT-23

The MMBT3906 is the SOT-23 surface-mount version of the 2N3906 general-purpose PNP transistor. It handles up to 40 V and 200 mA, and is used for low-power high-side switching and small-signal amplification. It is the PNP complement of the NPN MMBT3904.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base terminal of the PNP BJT. Controls collector current via base-emitter forward bias (VBE(sat) typ -0.85V at IC = -10mA). Absolute max VEBO = -6.0V; peak base current IBM = -100mA. |
| 2 | E | passive | Emitter terminal of the PNP BJT. Common reference for base drive; typically connected to the positive supply in a high-side switch or common-emitter amplifier. |
| 3 | C | passive | Collector terminal of the PNP BJT. Rated VCBO = -40V, VCEO = -40V, IC = -200mA continuous / -350mA peak. VCE(sat) typ -0.25V at IC = -10mA, IB = -1.0mA. |

## Key specifications

| Parameter | Value |
|---|---|
| Type | PNP bipolar transistor |
| Collector-emitter voltage (VCEO) | -40 V |
| Collector current (IC) | -200 mA |
| hFE | 100 to 300 at IC = -10 mA |
| Transition frequency (fT) | 250 MHz |
| Power dissipation | 350 mW |
| Operating temperature | -55 C to 150 C |

## Ordering variants

Same part, different packaging or reel option.

- `MMBT3906-7-F`
- `MMBT3906-13-F`

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | -40 |  |  | V |  | 2 |
| Collector-Emitter Voltage | VCEO | -40 |  |  | V |  | 2 |
| Emitter-Base Voltage | VEBO | -6 |  |  | V |  | 2 |
| Collector Current | IC | -200 |  |  | mA |  | 2 |
| Peak Collector Current | ICM | -350 |  |  | mA |  | 2 |
| Peak Base Current | IBM | -100 |  |  | mA |  | 2 |
| Power Dissipation | PD |  |  | 310 | mW | Note 5: minimum recommended pad layout, 1oz copper, single-sided FR4 PCB, still air | 2 |
| Power Dissipation | PD |  |  | 350 | mW | Note 6: 15mm × 15mm 1oz copper | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | C |  | 2 |
| Electrostatic Discharge—Human Body Model | ESD HBM |  |  | 4000 | V | JEDEC Class 3A | 2 |
| Electrostatic Discharge—Machine Model | ESD MM |  |  | 400 | V | JEDEC Class C | 2 |
| Collector-Base Breakdown Voltage | BVCBO | -40 |  |  | V | IC = -100μA, IE = 0 | 4 |
| Collector-Emitter Breakdown Voltage | BVCEO | -40 |  |  | V | IC = -10mA, IB = 0 | 4 |
| Emitter-Base Breakdown Voltage | BVEBO | -6 |  |  | V | IE = -100μA, IC = 0 | 4 |
| Collector Cutoff Current | ICEV |  |  | -50 | nA | VCE = -30V, VBE = 3.0V | 4 |
| Emitter-Base Cutoff Current | IEBO |  |  | -50 | nA | VEB = -5V | 4 |
| DC Current Gain | hFE | 60 |  |  |  | IC = -100µA, VCE = -1.0V | 4 |
| DC Current Gain | hFE | 80 |  |  |  | IC = -1.0mA, VCE = -1.0V | 4 |
| DC Current Gain | hFE | 100 |  | 300 |  | IC = -10mA, VCE = -1.0V | 4 |
| DC Current Gain | hFE | 30 |  |  |  | IC = -100mA, VCE = -1.0V | 4 |
| Collector-Emitter Saturation Voltage | VCE(sat) |  |  | -0.25 | V | IC = -10mA, IB = -1.0mA | 4 |
| Collector-Emitter Saturation Voltage | VCE(sat) |  |  | -0.4 | V | IC = -50mA, IB = -5.0mA | 4 |
| Base-Emitter Saturation Voltage | VBE(sat) | -0.65 |  | -0.85 | V | IC = -10mA, IB = -1.0mA | 4 |
| Base-Emitter Saturation Voltage | VBE(sat) |  |  | -0.95 | V | IC = -50mA, IB = -5.0mA | 4 |
| Output Capacitance | Cobo |  |  | 4.5 | pF | VCB = -5.0V, f = 1.0MHz, IE = 0 | 4 |
| Input Capacitance | Cibo |  |  | 10 | pF | VEB = -0.5V, f = 1.0MHz, IC = 0 | 4 |
| Input Impedance | hie | 2 |  | 12 | kΩ | VCE = 10V, IC = 1.0mA, f = 1.0kHz | 4 |
| Voltage Feedback Ratio | hre | 0.1 |  | 10 | × 10-4 | VCE = 10V, IC = 1.0mA, f = 1.0kHz | 4 |
| Small-Signal Current Gain | hfe | 100 |  | 400 |  | VCE = 10V, IC = 1.0mA, f = 1.0kHz | 4 |
| Output Admittance | hoe | 3 |  | 60 | μS | VCE = 10V, IC = 1.0mA, f = 1.0kHz | 4 |
| Current Gain-Bandwidth Product | fT | 250 |  |  | MHz | VCE = -20V, IC = -10mA, f = 100MHz | 4 |
| Noise Figure | NF |  |  | 4 | dB | VCE = -5.0V, IC = -100μA, RS = 1.0kΩ, f = 1.0kHz | 4 |
| Delay Time | td |  |  | 35 | ns | VCC = -3.0V, IC = -10mA | 4 |
| Rise Time | tr |  |  | 35 | ns | VBE(off) = 0.5V, IB1 = -1.0mA | 4 |
| Storage Time | ts |  |  | 225 | ns | VCC = -3.0V, IC = -10mA | 4 |
| Fall Time | tf |  |  | 75 | ns | IB1 = IB2 = -1.0mA | 4 |
| Thermal Resistance, Junction to Ambient | RθJA |  | 403 |  | C/W | Note 5: minimum recommended pad layout, 1oz copper, single-sided FR4 PCB, still air | 2 |
| Thermal Resistance, Junction to Ambient | RθJA |  | 357 |  | C/W | Note 6: 15mm × 15mm 1oz copper | 2 |
| Thermal Resistance, Junction to Leads | RθJL |  | 350 |  | C/W | Note 7: junction to solder point (end of leads) | 2 |

## CAD (KiCad official)

- Symbol: `mmbt3906.kicad_sym`
- Footprint: `mmbt3906.kicad_mod`
- 3D model: SOT-23 body from KiCad `Package_TO_SOT_SMD/SOT-23`.
- 3D model files: `mmbt3906-etched.step` / `mmbt3906-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mmbt3906.step` / `mmbt3906.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Diodes Incorporated datasheet](https://www.diodes.com/assets/Datasheets/MMBT3906.pdf) (7 pp, sha256 `288d5958b9e1e1da`, retrieved 2026-08-17, tier: manufacturer)
- **Extractor:** `ds2sf` (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/mmbt3906-datasheet.pdf)