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MMBT3906 PNP Transistor

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by adom

General-purpose 40 V PNP transistor in SOT-23, the surface-mount 2N3906.

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Made with kicad-footprint-generator 10.0 · KiCad file format 20260206
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docs mmbt3906: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray
viewers viewers · Ray
mmbt3906-etched.fit.json mmbt3906: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray
mmbt3906-etched.glb mmbt3906: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray
mmbt3906-etched.step mmbt3906: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray
mmbt3906.glb Publish 0.1.0 · Ray
mmbt3906.kicad_mod Publish 0.1.0 · Ray
mmbt3906.kicad_sym Publish 0.1.0 · Ray
mmbt3906.lbr add validated EAGLE .lbr (Fusion library) · Ray
mmbt3906.step Publish 0.1.0 · Ray
package.json Publish 0.1.0 · Ray
page.json mmbt3906: specified limits as data (metadata.characteristics, 39 rows from the datasheet) · Ray
README.md mmbt3906: specified limits as data (metadata.characteristics, 39 rows from the datasheet) · Ray

MMBT3906

Diodes Incorporated · Bipolar Transistor (BJT) · SOT-23

The MMBT3906 is the SOT-23 surface-mount version of the 2N3906 general-purpose PNP transistor. It handles up to 40 V and 200 mA, and is used for low-power high-side switching and small-signal amplification. It is the PNP complement of the NPN MMBT3904.

Pinout

Pin Name Type Function
1 B input Base terminal of the PNP BJT. Controls collector current via base-emitter forward bias (VBE(sat) typ -0.85V at IC = -10mA). Absolute max VEBO = -6.0V; peak base current IBM = -100mA.
2 E passive Emitter terminal of the PNP BJT. Common reference for base drive; typically connected to the positive supply in a high-side switch or common-emitter amplifier.
3 C passive Collector terminal of the PNP BJT. Rated VCBO = -40V, VCEO = -40V, IC = -200mA continuous / -350mA peak. VCE(sat) typ -0.25V at IC = -10mA, IB = -1.0mA.

Key specifications

Parameter Value
Type PNP bipolar transistor
Collector-emitter voltage (VCEO) -40 V
Collector current (IC) -200 mA
hFE 100 to 300 at IC = -10 mA
Transition frequency (fT) 250 MHz
Power dissipation 350 mW
Operating temperature -55 C to 150 C

Ordering variants

Same part, different packaging or reel option.

  • MMBT3906-7-F
  • MMBT3906-13-F

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO -40 V 2
Collector-Emitter Voltage VCEO -40 V 2
Emitter-Base Voltage VEBO -6 V 2
Collector Current IC -200 mA 2
Peak Collector Current ICM -350 mA 2
Peak Base Current IBM -100 mA 2
Power Dissipation PD 310 mW Note 5: minimum recommended pad layout, 1oz copper, single-sided FR4 PCB, still air 2
Power Dissipation PD 350 mW Note 6: 15mm × 15mm 1oz copper 2
Operating and Storage Temperature Range TJ, TSTG -55 150 C 2
Electrostatic Discharge—Human Body Model ESD HBM 4000 V JEDEC Class 3A 2
Electrostatic Discharge—Machine Model ESD MM 400 V JEDEC Class C 2
Collector-Base Breakdown Voltage BVCBO -40 V IC = -100μA, IE = 0 4
Collector-Emitter Breakdown Voltage BVCEO -40 V IC = -10mA, IB = 0 4
Emitter-Base Breakdown Voltage BVEBO -6 V IE = -100μA, IC = 0 4
Collector Cutoff Current ICEV -50 nA VCE = -30V, VBE = 3.0V 4
Emitter-Base Cutoff Current IEBO -50 nA VEB = -5V 4
DC Current Gain hFE 60 IC = -100µA, VCE = -1.0V 4
DC Current Gain hFE 80 IC = -1.0mA, VCE = -1.0V 4
DC Current Gain hFE 100 300 IC = -10mA, VCE = -1.0V 4
DC Current Gain hFE 30 IC = -100mA, VCE = -1.0V 4
Collector-Emitter Saturation Voltage VCE(sat) -0.25 V IC = -10mA, IB = -1.0mA 4
Collector-Emitter Saturation Voltage VCE(sat) -0.4 V IC = -50mA, IB = -5.0mA 4
Base-Emitter Saturation Voltage VBE(sat) -0.65 -0.85 V IC = -10mA, IB = -1.0mA 4
Base-Emitter Saturation Voltage VBE(sat) -0.95 V IC = -50mA, IB = -5.0mA 4
Output Capacitance Cobo 4.5 pF VCB = -5.0V, f = 1.0MHz, IE = 0 4
Input Capacitance Cibo 10 pF VEB = -0.5V, f = 1.0MHz, IC = 0 4
Input Impedance hie 2 12 kΩ VCE = 10V, IC = 1.0mA, f = 1.0kHz 4
Voltage Feedback Ratio hre 0.1 10 × 10-4 VCE = 10V, IC = 1.0mA, f = 1.0kHz 4
Small-Signal Current Gain hfe 100 400 VCE = 10V, IC = 1.0mA, f = 1.0kHz 4
Output Admittance hoe 3 60 μS VCE = 10V, IC = 1.0mA, f = 1.0kHz 4
Current Gain-Bandwidth Product fT 250 MHz VCE = -20V, IC = -10mA, f = 100MHz 4
Noise Figure NF 4 dB VCE = -5.0V, IC = -100μA, RS = 1.0kΩ, f = 1.0kHz 4
Delay Time td 35 ns VCC = -3.0V, IC = -10mA 4
Rise Time tr 35 ns VBE(off) = 0.5V, IB1 = -1.0mA 4
Storage Time ts 225 ns VCC = -3.0V, IC = -10mA 4
Fall Time tf 75 ns IB1 = IB2 = -1.0mA 4
Thermal Resistance, Junction to Ambient RθJA 403 C/W Note 5: minimum recommended pad layout, 1oz copper, single-sided FR4 PCB, still air 2
Thermal Resistance, Junction to Ambient RθJA 357 C/W Note 6: 15mm × 15mm 1oz copper 2
Thermal Resistance, Junction to Leads RθJL 350 C/W Note 7: junction to solder point (end of leads) 2

CAD (KiCad official)

  • Symbol: mmbt3906.kicad_sym
  • Footprint: mmbt3906.kicad_mod
  • 3D model: SOT-23 body from KiCad Package_TO_SOT_SMD/SOT-23.
  • 3D model files: mmbt3906-etched.step / mmbt3906-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt3906.step / mmbt3906.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 288d5958b9e1e1da, retrieved 2026-08-17, tier: manufacturer)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF