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Generated by kicad-footprint-generator · KiCad file format 20260206

Name	Last commit message	Last updated
docs	Publish 0.1.0 · Ray	1mo ago
viewers	mmbt3904x: viewers · Ray	1mo ago
mmbt3904x-etched.glb	mmbt3904x: factory component page (tier=lcsc) · Ray	1mo ago
mmbt3904x-etched.step	mmbt3904x: factory component page (tier=lcsc) · Ray	1mo ago
mmbt3904x-hero.glb	mmbt3904x: hero GLB from the etched model (keeps the MPN mark) · Ray	1mo ago
mmbt3904x-hero.overlay.json	Publish 0.1.0 · Ray	1mo ago
mmbt3904x.glb	Publish 0.1.0 · Ray	1mo ago
mmbt3904x.kicad_mod	Publish 0.1.0 · Ray	1mo ago
mmbt3904x.kicad_sym	Publish 0.1.0 · Ray	1mo ago
mmbt3904x.lbr	Publish 0.1.0 · Ray	1mo ago
mmbt3904x.step	Publish 0.1.0 · Ray	1mo ago
package.json	Publish 0.1.0 · Ray	1mo ago
page.json	mmbt3904x: specified limits as data (metadata.characteristics, 22 rows from the datasheet) · Ray	23d ago
README.md	mmbt3904x: specified limits as data (metadata.characteristics, 22 rows from the datasheet) · Ray	23d ago

MMBT3904X

Shenzhen JingYang · Bipolar (BJT) · SOT-23

MMBT3904X from Shenzhen JingYang, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	BASE	input	Base of the NPN transistor; VEBO (emitter-base voltage, open collector) is limited to 6 V.
2	EMITTER	passive	Emitter of the NPN transistor; collector current is limited to 200 mA DC.
3	COLLECTOR	passive	Collector of the NPN transistor; VCEO is 40 V (open base) and VCBO is 60 V (open emitter).

Key specifications

Parameter	Value
Manufacturer	Shenzhen JingYang
Package	SOT-23
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Max	Unit	Conditions	Page
collector-base voltage	VCBO		60	V	open emitter	1
collector-emitter voltage	VCEO		40	V	open base	1
emitter-base voltage	VEBO		6	V	open collector	1
collector current (DC)	IC		200	mA		1
total power dissipation	Ptot		200	mW	Tamb≤25°C	1
storage temperature	Tstg	-55	150	°C		1
junction temperature	Tj		150	°C		1
operating ambient temperature	Tamb	-55	150	°C		1
collector cut-off current	ICBO		0.1	uA	IE = 0; VCB = 60 V	2
emitter cut-off current	IEBO		0.1	uA	IC = 0; VEB = 5 V	2
DC current gain	hFE	100			VCE = 1 V; IC = 10mA	2
DC current gain	hFE	60	300		VCE = 1 V; IC = 50mA	2
DC current gain	hFE	30			VCE = 1 V; IC = 100mA	2
collector-emitter saturation voltage	VCE(sat)		200	mV	IC = 10mA; IB = 1mA	2
collector-emitter saturation voltage	VCE(sat)		300	mV	IC = 50mA; IB = 5mA	2
base-emitter saturation voltage	VBE(sat)	650	850	mV	IC = 10mA; IB = 1mA	2
base-emitter saturation voltage	VBE(sat)		950	mV	IC = 50mA; IB = 5mA	2
transition frequency	fT	300		MHz	IC =10mA; VCE =20V; f =100MHz	2
delay time	td		35	ns	VCC=3Vdc, VBE=–0.5Vdc	2
rise time	tr		35	ns	IC=10mAdc, IB1=1mAdc	2
storage time	ts		200	ns	VCC=3Vdc, IC=10mAdc	2
fall time	tf		50	ns	IB1=IB2=1mAdc	2

CAD (KiCad official)

Symbol: MMBT3904X
Footprint: Package_TO_SOT_SMD:SOT-23
3D model: SOT-23 (KiCad packages3D, STEP)
3D model files: mmbt3904x-etched.step / mmbt3904x-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt3904x.step / mmbt3904x.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Shenzhen JingYang datasheet (5 pp, sha256 87e2db9915cd262f, retrieved 2026-10-09, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF