component

MMBT3904X

Public Made by Adom

by adom

Shenzhen JingYang Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsmmbt3904xfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity

3D Model

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Datasheet

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

MMBT3904X

Shenzhen JingYang · Bipolar (BJT) · SOT-23

MMBT3904X from Shenzhen JingYang, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base of the NPN transistor; VEBO (emitter-base voltage, open collector) is limited to 6 V.
2 EMITTER passive Emitter of the NPN transistor; collector current is limited to 200 mA DC.
3 COLLECTOR passive Collector of the NPN transistor; VCEO is 40 V (open base) and VCBO is 60 V (open emitter).

Key specifications

Parameter Value
Manufacturer Shenzhen JingYang
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
collector-base voltage VCBO 60 V open emitter 1
collector-emitter voltage VCEO 40 V open base 1
emitter-base voltage VEBO 6 V open collector 1
collector current (DC) IC 200 mA 1
total power dissipation Ptot 200 mW Tamb≤25°C 1
storage temperature Tstg -55 150 °C 1
junction temperature Tj 150 °C 1
operating ambient temperature Tamb -55 150 °C 1
collector cut-off current ICBO 0.1 uA IE = 0; VCB = 60 V 2
emitter cut-off current IEBO 0.1 uA IC = 0; VEB = 5 V 2
DC current gain hFE 100 VCE = 1 V; IC = 10mA 2
DC current gain hFE 60 300 VCE = 1 V; IC = 50mA 2
DC current gain hFE 30 VCE = 1 V; IC = 100mA 2
collector-emitter saturation voltage VCE(sat) 200 mV IC = 10mA; IB = 1mA 2
collector-emitter saturation voltage VCE(sat) 300 mV IC = 50mA; IB = 5mA 2
base-emitter saturation voltage VBE(sat) 650 850 mV IC = 10mA; IB = 1mA 2
base-emitter saturation voltage VBE(sat) 950 mV IC = 50mA; IB = 5mA 2
transition frequency fT 300 MHz IC =10mA; VCE =20V; f =100MHz 2
delay time td 35 ns VCC=3Vdc, VBE=–0.5Vdc 2
rise time tr 35 ns IC=10mAdc, IB1=1mAdc 2
storage time ts 200 ns VCC=3Vdc, IC=10mAdc 2
fall time tf 50 ns IB1=IB2=1mAdc 2

CAD (KiCad official)

  • Symbol: MMBT3904X
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbt3904x-etched.step / mmbt3904x-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt3904x.step / mmbt3904x.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Shenzhen JingYang datasheet (5 pp, sha256 87e2db9915cd262f, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF