# MMBT3904DW

**Shikues** · Bipolar Transistors - BJT · SOT-363

MMBT3904DW from Shikues, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E1 | passive | Emitter of NPN transistor Q1; Q1 has VCEO 40 V, VCBO 60 V, VEBO 6 V and IC 200 mA continuous. |
| 2 | B1 | passive | Base of NPN transistor Q1; emitter-base voltage is limited to 6 V. |
| 3 | C2 | passive | Collector of NPN transistor Q2; VCEO 40 V, VCBO 60 V and IC 200 mA continuous. |
| 4 | E2 | passive | Emitter of NPN transistor Q2; emitter-base voltage is limited to 6 V. |
| 5 | B2 | passive | Base of NPN transistor Q2; emitter-base voltage is limited to 6 V. |
| 6 | C1 | passive | Collector of NPN transistor Q1; VCEO 40 V, VCBO 60 V and IC 200 mA continuous. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Shikues |
| Package | SOT-363 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | 60 |  |  | V | IC= 10uA, IE=0 | 1 |
| Collector-emitter breakdown voltage | V(BR)CEO | 40 |  |  | V | IC= 1mA, IB=0 | 1 |
| Emitter-base breakdown voltage | V(BR)EBO | 6 |  |  | V | IE=10uA, IC=0 | 1 |
| Collector cut-off current | ICBO |  |  | 0.05 | µA | VCB=30V, IE=0 | 1 |
| Emitter cut-off current | IEBO |  |  | 0.05 | µA | VEB=3V, IC=0 | 1 |
| DC current gain | hFE | 40 |  |  |  | VCE=1V, IC=0.1mA | 1 |
| DC current gain | hFE | 70 |  |  |  | VCE=1V, IC=1mA | 1 |
| DC current gain | hFE | 100 |  |  |  | VCE=1V, IC=10mA | 1 |
| DC current gain | hFE | 60 |  |  |  | VCE=1V, IC=50mA | 1 |
| DC current gain | hFE | 30 |  |  |  | VCE=1V, IC=100mA | 1 |
| DC current gain | hFE |  |  | 300 |  |  | 1 |
| Collector-emitter saturation voltage | VCE(sat) |  |  | 0.2 | V | IC=10mA, IB= 1mA | 1 |
| Collector-emitter saturation voltage | VCE(sat) |  |  | 0.3 | V | IC=50mA, IB= 5mA | 1 |
| Base-emitter saturation voltage | VBE(sat) |  |  | 0.85 | V | IC=10mA, IB= 1mA | 1 |
| Base-emitter saturation voltage | VBE(sat) |  |  | 0.95 | V | IC=50mA, IB= 5mA | 1 |
| Transition frequency | fT | 300 |  |  | MHz | VCE=20V, Ic=10mA, f=100MHZ | 1 |
| Collector output capacitance | Cob |  |  | 4 | PF | VCB=5V, IE=0, f=1MHZ | 1 |
| Collector-Base Voltage | VCBO |  |  | 60 | V |  | 1 |
| Collector-Emitter Voltage | VCEO |  |  | 40 | V |  | 1 |
| Emitter-Base Voltage | VEBO |  |  | 6 | V |  | 1 |
| Collector Current, Continuous | IC |  |  | 200 | mA |  | 1 |
| Collector Power Dissipation | PC |  |  | 350 | mW |  | 1 |
| Junction Temperature | Tj |  |  | 150 | ℃ |  | 1 |
| Storage Temperature | Tstg | -55 |  | 150 | ℃ |  | 1 |

## CAD (KiCad official)

- Symbol: `MMBT3904DW`
- Footprint: `Package_TO_SOT_SMD:SOT-363_SC-70-6`
- 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files: `mmbt3904dw-etched.step` / `mmbt3904dw-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mmbt3904dw.step` / `mmbt3904dw.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Shikues datasheet](docs/mmbt3904dw-datasheet.pdf) (3 pp, sha256 `996e5e4d80655adc`, retrieved 2026-11-04, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/mmbt3904dw-datasheet.pdf)