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MMBT3904DW

Public Made by Adom

by adom

Shikues Bipolar Transistors - BJT, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Datasheet

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Contents

README

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MMBT3904DW

Shikues · Bipolar Transistors - BJT · SOT-363

MMBT3904DW from Shikues, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E1 passive Emitter of NPN transistor Q1; Q1 has VCEO 40 V, VCBO 60 V, VEBO 6 V and IC 200 mA continuous.
2 B1 passive Base of NPN transistor Q1; emitter-base voltage is limited to 6 V.
3 C2 passive Collector of NPN transistor Q2; VCEO 40 V, VCBO 60 V and IC 200 mA continuous.
4 E2 passive Emitter of NPN transistor Q2; emitter-base voltage is limited to 6 V.
5 B2 passive Base of NPN transistor Q2; emitter-base voltage is limited to 6 V.
6 C1 passive Collector of NPN transistor Q1; VCEO 40 V, VCBO 60 V and IC 200 mA continuous.

Key specifications

Parameter Value
Manufacturer Shikues
Package SOT-363
Category Triode/MOS Tube/Transistor
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO 60 V IC= 10uA, IE=0 1
Collector-emitter breakdown voltage V(BR)CEO 40 V IC= 1mA, IB=0 1
Emitter-base breakdown voltage V(BR)EBO 6 V IE=10uA, IC=0 1
Collector cut-off current ICBO 0.05 µA VCB=30V, IE=0 1
Emitter cut-off current IEBO 0.05 µA VEB=3V, IC=0 1
DC current gain hFE 40 VCE=1V, IC=0.1mA 1
DC current gain hFE 70 VCE=1V, IC=1mA 1
DC current gain hFE 100 VCE=1V, IC=10mA 1
DC current gain hFE 60 VCE=1V, IC=50mA 1
DC current gain hFE 30 VCE=1V, IC=100mA 1
DC current gain hFE 300 1
Collector-emitter saturation voltage VCE(sat) 0.2 V IC=10mA, IB= 1mA 1
Collector-emitter saturation voltage VCE(sat) 0.3 V IC=50mA, IB= 5mA 1
Base-emitter saturation voltage VBE(sat) 0.85 V IC=10mA, IB= 1mA 1
Base-emitter saturation voltage VBE(sat) 0.95 V IC=50mA, IB= 5mA 1
Transition frequency fT 300 MHz VCE=20V, Ic=10mA, f=100MHZ 1
Collector output capacitance Cob 4 PF VCB=5V, IE=0, f=1MHZ 1
Collector-Base Voltage VCBO 60 V 1
Collector-Emitter Voltage VCEO 40 V 1
Emitter-Base Voltage VEBO 6 V 1
Collector Current, Continuous IC 200 mA 1
Collector Power Dissipation PC 350 mW 1
Junction Temperature Tj 150 ℃ 1
Storage Temperature Tstg -55 150 ℃ 1

CAD (KiCad official)

  • Symbol: MMBT3904DW
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: mmbt3904dw-etched.step / mmbt3904dw-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt3904dw.step / mmbt3904dw.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Shikues datasheet (3 pp, sha256 996e5e4d80655adc, retrieved 2026-11-04, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF