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MMBT2907AM3T5G-MS
Public Made by Adomby adom
MSKSEMI Bipolar (BJT), SOT-723. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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MMBT2907AM3T5G-MS
MSKSEMI · Bipolar (BJT) · SOT-723
MMBT2907AM3T5G-MS from MSKSEMI, in a SOT-723. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the PNP transistor, with VBE(sat) specified at -0.95 V maximum for IC=-50 mA and IB=-5 mA. |
| 2 | EMITTER | passive | Emitter terminal of the PNP transistor, with the emitter-base voltage VEBO rated at -5 V and the emitter-base breakdown V(BR)EBO at -5 V for IE=-10 µA. |
| 3 | COLLECTOR | passive | Collector terminal of the PNP transistor, with the collector-emitter voltage VCEO rated at -60 V and the continuous collector current IC rated at -0.5 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | SOT-723 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | -60 | V | Ta=25ºC | 3 | ||
| Collector-emitter voltage | VCEO | -60 | V | Ta=25ºC | 3 | ||
| Emitter-base voltage | VEBO | -5 | V | Ta=25ºC | 3 | ||
| Collector current, continuous | IC | -0.5 | A | Ta=25ºC | 3 | ||
| Power dissipation | PC | 100 | mW | Ta=25ºC | 3 | ||
| Junction temperature | TJ | 150 | ℃ | 3 | |||
| Storage temperature | Tstg | -55 | 150 | ℃ | 3 | ||
| Thermal resistance, junction to ambient | ΘJA | 1250 | ℃/W | Ta=25ºC | 3 | ||
| Collector-base breakdown voltage | V(BR)CBO | -60 | V | IC=-10µA,IE=0 | 3 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | -60 | V | IC=-1mA,IB=0 | 3 | ||
| Emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE=-10µA,IC=0 | 3 | ||
| Collector cut-off current | ICBO | -100 | nA | VCB=-40V,IE=0 | 3 | ||
| Collector cut-off current | ICEX | -50 | A | VCE=-30V,VEB(off)=-3V | 3 | ||
| Emitter cut-off current | IEBO | -100 | nA | VEB=-5V,IC=0 | 3 | ||
| DC current gain | hFE(1) | 100 | 300 | VCE=-1V,IC=-10mA | 3 | ||
| DC current gain | hFE(2) | 60 | VCE=-1V,IC=-50mA | 3 | |||
| DC current gain | hFE(3) | 30 | VCE=-2V,IC=-100mA | 3 | |||
| Collector-emitter saturation voltage | VCE(sat) | -0.3 | V | IC=-50mA,IB=-5mA | 3 | ||
| Base-emitter saturation voltage | VBE(sat) | -0.95 | V | IC=-50mA,IB=-5mA | 3 | ||
| Transition frequency | T | 300 | MHz | VCE=-20V,IC=-10mA,f=100MHz | 3 | ||
| Delay time | td | 35 | ns | VCC=-3V,VBE(off)=-0.5V,IC=-10mA, IB1=IB2=-1mA | 3 | ||
| Rise time | tr | 35 | ns | 3 | |||
| Storage time | ts | 225 | ns | VCC=-3V,IC=-10mA IB1=IB2=-1mA | 3 | ||
| Fall time | tf | 75 | ns | 3 |
CAD (KiCad official)
- Symbol:
MMBT2907AM3T5G-MS - Footprint:
Package_TO_SOT_SMD:SOT-723 - 3D model: SOT-723, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.5 mm nominal SOT-723 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files:
mmbt2907am3t5g-ms-etched.step/mmbt2907am3t5g-ms-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmbt2907am3t5g-ms.step/mmbt2907am3t5g-ms.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MSKSEMI datasheet (6 pp, sha256
fa26a1601ef610af, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MMBT2907AM3T5G-MS
**MSKSEMI** · Bipolar (BJT) · SOT-723
MMBT2907AM3T5G-MS from MSKSEMI, in a SOT-723. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the PNP transistor, with VBE(sat) specified at -0.95 V maximum for IC=-50 mA and IB=-5 mA. |
| 2 | EMITTER | passive | Emitter terminal of the PNP transistor, with the emitter-base voltage VEBO rated at -5 V and the emitter-base breakdown V(BR)EBO at -5 V for IE=-10 µA. |
| 3 | COLLECTOR | passive | Collector terminal of the PNP transistor, with the collector-emitter voltage VCEO rated at -60 V and the continuous collector current IC rated at -0.5 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | SOT-723 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | | | -60 | V | Ta=25ºC | 3 |
| Collector-emitter voltage | VCEO | | | -60 | V | Ta=25ºC | 3 |
| Emitter-base voltage | VEBO | | | -5 | V | Ta=25ºC | 3 |
| Collector current, continuous | IC | | | -0.5 | A | Ta=25ºC | 3 |
| Power dissipation | PC | | | 100 | mW | Ta=25ºC | 3 |
| Junction temperature | TJ | | | 150 | ℃ | | 3 |
| Storage temperature | Tstg | -55 | | 150 | ℃ | | 3 |
| Thermal resistance, junction to ambient | ΘJA | | | 1250 | ℃/W | Ta=25ºC | 3 |
| Collector-base breakdown voltage | V(BR)CBO | -60 | | | V | IC=-10µA,IE=0 | 3 |
| Collector-emitter breakdown voltage | V(BR)CEO | -60 | | | V | IC=-1mA,IB=0 | 3 |
| Emitter-base breakdown voltage | V(BR)EBO | -5 | | | V | IE=-10µA,IC=0 | 3 |
| Collector cut-off current | ICBO | | | -100 | nA | VCB=-40V,IE=0 | 3 |
| Collector cut-off current | ICEX | | | -50 | A | VCE=-30V,VEB(off)=-3V | 3 |
| Emitter cut-off current | IEBO | | | -100 | nA | VEB=-5V,IC=0 | 3 |
| DC current gain | hFE(1) | 100 | | 300 | | VCE=-1V,IC=-10mA | 3 |
| DC current gain | hFE(2) | 60 | | | | VCE=-1V,IC=-50mA | 3 |
| DC current gain | hFE(3) | 30 | | | | VCE=-2V,IC=-100mA | 3 |
| Collector-emitter saturation voltage | VCE(sat) | | | -0.3 | V | IC=-50mA,IB=-5mA | 3 |
| Base-emitter saturation voltage | VBE(sat) | | | -0.95 | V | IC=-50mA,IB=-5mA | 3 |
| Transition frequency | T | 300 | | | MHz | VCE=-20V,IC=-10mA,f=100MHz | 3 |
| Delay time | td | | 35 | | ns | VCC=-3V,VBE(off)=-0.5V,IC=-10mA, IB1=IB2=-1mA | 3 |
| Rise time | tr | | 35 | | ns | | 3 |
| Storage time | ts | | 225 | | ns | VCC=-3V,IC=-10mA IB1=IB2=-1mA | 3 |
| Fall time | tf | | 75 | | ns | | 3 |
## CAD (KiCad official)
- Symbol: `MMBT2907AM3T5G-MS`
- Footprint: `Package_TO_SOT_SMD:SOT-723`
- 3D model: SOT-723, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.5 mm nominal SOT-723 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files: `mmbt2907am3t5g-ms-etched.step` / `mmbt2907am3t5g-ms-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mmbt2907am3t5g-ms.step` / `mmbt2907am3t5g-ms.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [MSKSEMI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603058330353225728) (6 pp, sha256 `fa26a1601ef610af`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/mmbt2907am3t5g-ms-datasheet.pdf)