Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

MMBT2907AM3T5G-MS

MSKSEMI · Bipolar (BJT) · SOT-723

MMBT2907AM3T5G-MS from MSKSEMI, in a SOT-723. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the PNP transistor, with VBE(sat) specified at -0.95 V maximum for IC=-50 mA and IB=-5 mA.
2 EMITTER passive Emitter terminal of the PNP transistor, with the emitter-base voltage VEBO rated at -5 V and the emitter-base breakdown V(BR)EBO at -5 V for IE=-10 µA.
3 COLLECTOR passive Collector terminal of the PNP transistor, with the collector-emitter voltage VCEO rated at -60 V and the continuous collector current IC rated at -0.5 A.

Key specifications

Parameter Value
Manufacturer MSKSEMI
Package SOT-723
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage VCBO -60 V Ta=25ºC 3
Collector-emitter voltage VCEO -60 V Ta=25ºC 3
Emitter-base voltage VEBO -5 V Ta=25ºC 3
Collector current, continuous IC -0.5 A Ta=25ºC 3
Power dissipation PC 100 mW Ta=25ºC 3
Junction temperature TJ 150 ℃ 3
Storage temperature Tstg -55 150 ℃ 3
Thermal resistance, junction to ambient ΘJA 1250 ℃/W Ta=25ºC 3
Collector-base breakdown voltage V(BR)CBO -60 V IC=-10µA,IE=0 3
Collector-emitter breakdown voltage V(BR)CEO -60 V IC=-1mA,IB=0 3
Emitter-base breakdown voltage V(BR)EBO -5 V IE=-10µA,IC=0 3
Collector cut-off current ICBO -100 nA VCB=-40V,IE=0 3
Collector cut-off current ICEX -50 A VCE=-30V,VEB(off)=-3V 3
Emitter cut-off current IEBO -100 nA VEB=-5V,IC=0 3
DC current gain hFE(1) 100 300 VCE=-1V,IC=-10mA 3
DC current gain hFE(2) 60 VCE=-1V,IC=-50mA 3
DC current gain hFE(3) 30 VCE=-2V,IC=-100mA 3
Collector-emitter saturation voltage VCE(sat) -0.3 V IC=-50mA,IB=-5mA 3
Base-emitter saturation voltage VBE(sat) -0.95 V IC=-50mA,IB=-5mA 3
Transition frequency T 300 MHz VCE=-20V,IC=-10mA,f=100MHz 3
Delay time td 35 ns VCC=-3V,VBE(off)=-0.5V,IC=-10mA, IB1=IB2=-1mA 3
Rise time tr 35 ns 3
Storage time ts 225 ns VCC=-3V,IC=-10mA IB1=IB2=-1mA 3
Fall time tf 75 ns 3

CAD (KiCad official)

  • Symbol: MMBT2907AM3T5G-MS
  • Footprint: Package_TO_SOT_SMD:SOT-723
  • 3D model: SOT-723, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.5 mm nominal SOT-723 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
  • 3D model files: mmbt2907am3t5g-ms-etched.step / mmbt2907am3t5g-ms-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt2907am3t5g-ms.step / mmbt2907am3t5g-ms.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MSKSEMI datasheet (6 pp, sha256 fa26a1601ef610af, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF