component

MMBT2222AW

Public Made by Adom

by adom

CBI Bipolar (BJT), SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MMBT2222AW

CBI · Bipolar (BJT) · SOT-323

MMBT2222AW from CBI, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN transistor; MMBT2222AW has VEBO of 6 V maximum and V(BR)EBO of 6 V minimum at IE = 10 µA.
2 E passive Emitter of the NPN transistor; maximum collector current is 600 mA.
3 C passive Collector of the NPN transistor; MMBT2222AW has VCBO of 75 V and VCEO of 40 V maximum, with IC up to 600 mA.

Key specifications

Parameter Value
Manufacturer CBI
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector Base Voltage (AW) VCBO 75 V 1
Collector Emitter Voltage (AW) VCEO 40 V 1
Emitter Base Voltage (AW) VEBO 6 V 1
Collector Current IC 600 mA 1
Power Dissipation Ptot 150 mW 1
Junction Temperature Tj 150 °C 1
Storage Temperature Range Tstg -55 150 °C 1
DC Current Gain hFE 35 at VCE = 10 V, IC = 0.1 mA 2
DC Current Gain hFE 50 at VCE = 10 V, IC = 1 mA 2
DC Current Gain hFE 75 at VCE = 10 V, IC = 10 mA 2
DC Current Gain hFE 100 300 at VCE = 10 V, IC = 150 mA 2
DC Current Gain hFE 40 at VCE = 10 V, IC = 500 mA (MMBT2222AW) 2
Collector Base Cutoff Current (AW) ICBO 100 nA at VCB = 60 V 2
Emitter Base Cutoff Current IEBO 100 nA at VEB = 3 V 2
Collector Base Breakdown Voltage (AW) V(BR)CBO 75 V at IC = 10 µA 2
Collector Emitter Breakdown Voltage (AW) V(BR)CEO 40 V at IC = 10 mA 2
Emitter Base Breakdown Voltage (AW) V(BR)EBO 6 V at IE = 10 µA 2
Collector Emitter Saturation Voltage (AW) VCE(sat) 0.3 V at IC = 150 mA, IB = 15 mA 2
Collector Emitter Saturation Voltage (AW) VCE(sat) 1 V at IC = 500 mA, IB = 50 mA 2
Base Emitter Saturation Voltage (AW) VBE(sat) 0.6 1.2 V at IC = 150 mA, IB = 15 mA 2
Base Emitter Saturation Voltage (AW) VBE(sat) 2 V at IC = 500 mA, IB = 50 mA 2
Transition Frequency fT 300 MHz at VCE = 20 V, -IE = 20 mA, f = 100 MHz 2
Collector Output Capacitance Cob 8 pF at VCB = 10 V, f = 100 KHz 2
Delay Time td 10 ns at VCC = 30 V, VBE(OFF) = 0.5 V, IC = 150 mA, IB1 = 15 mA 2
Rise Time tr 25 ns at VCC = 30 V, VBE(OFF) = 0.5 V, IC = 150 mA, IB1 = 15 mA 2
Storage Time tstg 225 ns at VCC = 30 V, IC = 150 mA, IB1 = -IB2 = 15 mA 2
Fall Time tf 60 ns at VCC = 30 V, IC = 150 mA, IB1 = -IB2 = 15 mA 2

CAD (KiCad official)

  • Symbol: MMBT2222AW
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: mmbt2222aw-etched.step / mmbt2222aw-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt2222aw.step / mmbt2222aw.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: CBI datasheet (4 pp, sha256 9f00b67191b69e24, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF