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Contents

Pinout
Key specifications
Electrical characteristics
CAD (KiCad official)
Provenance

README

markdown

MMBT2222AW

CBI · Bipolar (BJT) · SOT-323

MMBT2222AW from CBI, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	B	input	Base of the NPN transistor; MMBT2222AW has VEBO of 6 V maximum and V(BR)EBO of 6 V minimum at IE = 10 µA.
2	E	passive	Emitter of the NPN transistor; maximum collector current is 600 mA.
3	C	passive	Collector of the NPN transistor; MMBT2222AW has VCBO of 75 V and VCEO of 40 V maximum, with IC up to 600 mA.

Key specifications

Parameter	Value
Manufacturer	CBI
Package	SOT-323
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Max	Unit	Conditions	Page
Collector Base Voltage (AW)	VCBO		75	V		1
Collector Emitter Voltage (AW)	VCEO		40	V		1
Emitter Base Voltage (AW)	VEBO		6	V		1
Collector Current	IC		600	mA		1
Power Dissipation	Ptot		150	mW		1
Junction Temperature	Tj		150	°C		1
Storage Temperature Range	Tstg	-55	150	°C		1
DC Current Gain	hFE	35			at VCE = 10 V, IC = 0.1 mA	2
DC Current Gain	hFE	50			at VCE = 10 V, IC = 1 mA	2
DC Current Gain	hFE	75			at VCE = 10 V, IC = 10 mA	2
DC Current Gain	hFE	100	300		at VCE = 10 V, IC = 150 mA	2
DC Current Gain	hFE	40			at VCE = 10 V, IC = 500 mA (MMBT2222AW)	2
Collector Base Cutoff Current (AW)	ICBO		100	nA	at VCB = 60 V	2
Emitter Base Cutoff Current	IEBO		100	nA	at VEB = 3 V	2
Collector Base Breakdown Voltage (AW)	V(BR)CBO	75		V	at IC = 10 µA	2
Collector Emitter Breakdown Voltage (AW)	V(BR)CEO	40		V	at IC = 10 mA	2
Emitter Base Breakdown Voltage (AW)	V(BR)EBO	6		V	at IE = 10 µA	2
Collector Emitter Saturation Voltage (AW)	VCE(sat)		0.3	V	at IC = 150 mA, IB = 15 mA	2
Collector Emitter Saturation Voltage (AW)	VCE(sat)		1	V	at IC = 500 mA, IB = 50 mA	2
Base Emitter Saturation Voltage (AW)	VBE(sat)	0.6	1.2	V	at IC = 150 mA, IB = 15 mA	2
Base Emitter Saturation Voltage (AW)	VBE(sat)		2	V	at IC = 500 mA, IB = 50 mA	2
Transition Frequency	fT	300		MHz	at VCE = 20 V, -IE = 20 mA, f = 100 MHz	2
Collector Output Capacitance	Cob		8	pF	at VCB = 10 V, f = 100 KHz	2
Delay Time	td		10	ns	at VCC = 30 V, VBE(OFF) = 0.5 V, IC = 150 mA, IB1 = 15 mA	2
Rise Time	tr		25	ns	at VCC = 30 V, VBE(OFF) = 0.5 V, IC = 150 mA, IB1 = 15 mA	2
Storage Time	tstg		225	ns	at VCC = 30 V, IC = 150 mA, IB1 = -IB2 = 15 mA	2
Fall Time	tf		60	ns	at VCC = 30 V, IC = 150 mA, IB1 = -IB2 = 15 mA	2

CAD (KiCad official)

Symbol: MMBT2222AW
Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
3D model: SOT-323 (KiCad packages3D, STEP)
3D model files: mmbt2222aw-etched.step / mmbt2222aw-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt2222aw.step / mmbt2222aw.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: CBI datasheet (4 pp, sha256 9f00b67191b69e24, retrieved 2026-10-17, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF