# MMBD6050LT1G

**onsemi** · Switching Diodes · SOT-23

MMBD6050LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | ANODE | passive | Anode terminal of the switching diode; the device is rated for a 70 V reverse voltage (VR) and 200 mA forward current (IF). |
| 2 | NC | unconnected | No connection (Style 8 pin 2); this pin is not connected internally. |
| 3 | CATHODE | passive | Cathode terminal of the switching diode; the device is rated for a 70 V reverse voltage (VR) and 200 mA forward current (IF). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23 |
| Category | Diodes |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse Voltage | VR |  |  | 70 | Vdc |  | 1 |
| Forward Current | IF |  |  | 200 | mAdc |  | 1 |
| Peak Forward Surge Current | IFM(surge) |  |  | 500 | mAdc |  | 1 |
| Junction and Storage Temperature | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Reverse Breakdown Voltage | VR | 70 |  |  | Vdc | I(BR) = 100 Adc | 1 |
| Reverse Voltage Leakage Current | IR |  |  | 0.1 | Adc | VR = 50 Vdc | 1 |
| Forward Voltage | VF | 0.55 |  | 0.7 | Vdc | IF = 1.0 mAdc | 1 |
| Forward Voltage | VF | 0.85 |  | 1.1 | Vdc | IF = 100 mAdc | 1 |
| Reverse Recovery Time | tRR |  |  | 4 | ns | IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc (Figure 1) | 1 |
| Capacitance | CD |  |  | 2.5 | pF | VR = 0 V | 1 |
| Total Device Dissipation, FR-5 Board | PD |  |  | 225 | mW | FR-5 board (Note 1), TA = 25°C | 1 |
| Thermal Resistance, Junction-to-Ambient, FR-5 Board | RθJA |  |  | 556 | °C/W | FR-5 board (Note 1) | 1 |
| Total Device Dissipation, Alumina Substrate | PD |  |  | 300 | mW | Alumina substrate (Note 2), TA = 25°C | 1 |
| Thermal Resistance, Junction-to-Ambient, Alumina Substrate | RθJA |  |  | 417 | °C/W | Alumina substrate (Note 2) | 1 |

## CAD (KiCad official)

- Symbol: `MMBD6050LT1G`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `mmbd6050lt1g-etched.step` / `mmbd6050lt1g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mmbd6050lt1g.step` / `mmbd6050lt1g.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [onsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586186826071203840) (3 pp, sha256 `7a42d6bbed1cf2a3`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/mmbd6050lt1g-datasheet.pdf)