component
MMBD352LT1G
Public Made by Adomby adom
onsemi Schottky Diodes, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
MMBD352LT1G
onsemi · Schottky Diodes · SOT-23
MMBD352LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | ANODE | passive | Anode of the first diode in the dual hot carrier mixer pair; each diode is rated for a continuous reverse voltage VR of 7.0 V. |
| 2 | CATHODE | passive | Cathode of the second diode in the dual hot carrier mixer pair; each diode is rated for a continuous reverse voltage VR of 7.0 V. |
| 3 | CATHODE-ANODE | passive | Common node shared by the two diodes (cathode of one diode tied to anode of the other, per the datasheet's Style 11 pin labeling); each diode is rated for a continuous reverse voltage VR of 7.0 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23 |
| Category | Diodes |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Forward Voltage | VF | 0.6 | V | IF = 10 mAdc | 2 | ||
| Reverse Leakage Current | IR | 0.25 | µA | VR = 3.0 V | 2 | ||
| Reverse Leakage Current | IR | 10 | µA | VR = 7.0 V | 2 | ||
| Capacitance | C | 1 | pF | VR = 0 V, f = 1.0 MHz | 2 | ||
| Continuous Reverse Voltage | VR | 7 | V | Maximum Ratings, each diode | 1 | ||
| Total Device Dissipation FR-5 Board | PD | 225 | mW | TA = 25°C, FR-5 board (Note 1) | 1 | ||
| Thermal Resistance, Junction-to-Ambient, FR-5 Board | RθJA | 556 | °C/W | FR-5 board (Note 1) | 1 | ||
| Total Device Dissipation Alumina Substrate | PD | 300 | mW | TA = 25°C, alumina substrate (Note 2) | 1 | ||
| Thermal Resistance, Junction-to-Ambient, Alumina Substrate | RθJA | 417 | °C/W | alumina substrate (Note 2) | 1 | ||
| Junction and Storage Temperature | TJ, Tstg | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
MMBD352LT1G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
mmbd352lt1g-etched.step/mmbd352lt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmbd352lt1g.step/mmbd352lt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (3 pp, sha256
3d25cf059d274449, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MMBD352LT1G
**onsemi** · Schottky Diodes · SOT-23
MMBD352LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | ANODE | passive | Anode of the first diode in the dual hot carrier mixer pair; each diode is rated for a continuous reverse voltage VR of 7.0 V. |
| 2 | CATHODE | passive | Cathode of the second diode in the dual hot carrier mixer pair; each diode is rated for a continuous reverse voltage VR of 7.0 V. |
| 3 | CATHODE-ANODE | passive | Common node shared by the two diodes (cathode of one diode tied to anode of the other, per the datasheet's Style 11 pin labeling); each diode is rated for a continuous reverse voltage VR of 7.0 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23 |
| Category | Diodes |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Forward Voltage | VF | | | 0.6 | V | IF = 10 mAdc | 2 |
| Reverse Leakage Current | IR | | | 0.25 | µA | VR = 3.0 V | 2 |
| Reverse Leakage Current | IR | | | 10 | µA | VR = 7.0 V | 2 |
| Capacitance | C | | | 1 | pF | VR = 0 V, f = 1.0 MHz | 2 |
| Continuous Reverse Voltage | VR | | | 7 | V | Maximum Ratings, each diode | 1 |
| Total Device Dissipation FR-5 Board | PD | | | 225 | mW | TA = 25°C, FR-5 board (Note 1) | 1 |
| Thermal Resistance, Junction-to-Ambient, FR-5 Board | RθJA | | | 556 | °C/W | FR-5 board (Note 1) | 1 |
| Total Device Dissipation Alumina Substrate | PD | | | 300 | mW | TA = 25°C, alumina substrate (Note 2) | 1 |
| Thermal Resistance, Junction-to-Ambient, Alumina Substrate | RθJA | | | 417 | °C/W | alumina substrate (Note 2) | 1 |
| Junction and Storage Temperature | TJ, Tstg | -55 | | 150 | °C | | 1 |
## CAD (KiCad official)
- Symbol: `MMBD352LT1G`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `mmbd352lt1g-etched.step` / `mmbd352lt1g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mmbd352lt1g.step` / `mmbd352lt1g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [onsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588937140658966529) (3 pp, sha256 `3d25cf059d274449`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/mmbd352lt1g-datasheet.pdf)