# MJD42CT4G

**MSKSEMI** · Bipolar (BJT) · TO-252

MJD42CT4G from MSKSEMI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the PNP transistor; the datasheet specifies emitter-base breakdown V(BR)EBO of -5 V minimum and tests VCE(sat) with base current IB=-0.6 A at IC=-6 A. |
| 2 | COLLECTOR | passive | Collector terminal; rated at VCBO -100 V, VCEO -100 V, continuous collector current -6 A, and pulsed collector current -10 A (PW≤300 μs, duty cycle ≤2%). |
| 3 | EMITTER | passive | Emitter terminal; the emitter-base rating is VEBO -5 V, and the collector-emitter breakdown VCEO(sus) is -100 V with respect to this terminal. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO |  |  | -100 | V |  | 2 |
| Collector-Emitter Voltage | VCEO |  |  | -100 | V |  | 2 |
| Emitter-Base Voltage | VEBO |  |  | -5 | V |  | 2 |
| Collector Current - Continuous | IC |  |  | -6 | A |  | 2 |
| Collector Current - Pulse | ICP |  |  | -10 | A | Pulse test: PW≤300μs, Duty Cycle≤2% | 2 |
| Collector Power Dissipation | PC |  |  | 1.25 | W |  | 2 |
| Operating Junction and Storage Temperature Range | TJ,Tstg | -55 |  | 150 | ℃ |  | 2 |
| Collector-base breakdown voltage | V(BR)CBO | -100 |  |  | V | IC=-100μA,IE=0 | 3 |
| Collector-emitter breakdown voltage | VCEO(sus) | -100 |  |  | V | IC=-30mA,IB=0 | 3 |
| Emitter-base breakdown voltage | V(BR)EBO | -5 |  |  | V | IE=-100μA,IC=0 | 3 |
| Collector cut-off current | ICEO |  |  | -50 | μA | VCB=-60V,IE=0 | 3 |
| Emitter cut-off current | IEBO |  |  | -0.5 | mA | VEB=-5V IC=0 | 3 |
| DC current gain hFE(1) | hFE(1) | 30 |  |  |  | VCE=-4V,IC=-0.3A | 3 |
| DC current gain hFE(2) | hFE(2) | 15 |  | 75 |  | VCE=-4V,IC=-3A | 3 |
| Collector-emitter saturation voltage | VCE(sat) |  |  | -1.5 | V | IC=-6A,IB=-0.6A | 3 |
| Base-emitter voltage | VBE |  |  | -2 | V | VCE=-4V,IC=-6A | 3 |
| Transition frequency | fT | 3 |  |  | MHz | VCE=-10V,IC=-500mA,f=1MHz | 3 |

## CAD (KiCad official)

- Symbol: `MJD42CT4G`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `mjd42ct4g-etched.step` / `mjd42ct4g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mjd42ct4g.step` / `mjd42ct4g.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [MSKSEMI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590922991083732992) (6 pp, sha256 `2e472745f2883ce1`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/mjd42ct4g-datasheet.pdf)