component
MJD42CT4G
Public Made by Adomby adom
MSKSEMI Bipolar (BJT), TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMJD42CT4G
MSKSEMI · Bipolar (BJT) · TO-252
MJD42CT4G from MSKSEMI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the PNP transistor; the datasheet specifies emitter-base breakdown V(BR)EBO of -5 V minimum and tests VCE(sat) with base current IB=-0.6 A at IC=-6 A. |
| 2 | COLLECTOR | passive | Collector terminal; rated at VCBO -100 V, VCEO -100 V, continuous collector current -6 A, and pulsed collector current -10 A (PW≤300 μs, duty cycle ≤2%). |
| 3 | EMITTER | passive | Emitter terminal; the emitter-base rating is VEBO -5 V, and the collector-emitter breakdown VCEO(sus) is -100 V with respect to this terminal. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | -100 | V | 2 | |||
| Collector-Emitter Voltage | VCEO | -100 | V | 2 | |||
| Emitter-Base Voltage | VEBO | -5 | V | 2 | |||
| Collector Current - Continuous | IC | -6 | A | 2 | |||
| Collector Current - Pulse | ICP | -10 | A | Pulse test: PW≤300μs, Duty Cycle≤2% | 2 | ||
| Collector Power Dissipation | PC | 1.25 | W | 2 | |||
| Operating Junction and Storage Temperature Range | TJ,Tstg | -55 | 150 | ℃ | 2 | ||
| Collector-base breakdown voltage | V(BR)CBO | -100 | V | IC=-100μA,IE=0 | 3 | ||
| Collector-emitter breakdown voltage | VCEO(sus) | -100 | V | IC=-30mA,IB=0 | 3 | ||
| Emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE=-100μA,IC=0 | 3 | ||
| Collector cut-off current | ICEO | -50 | μA | VCB=-60V,IE=0 | 3 | ||
| Emitter cut-off current | IEBO | -0.5 | mA | VEB=-5V IC=0 | 3 | ||
| DC current gain hFE(1) | hFE(1) | 30 | VCE=-4V,IC=-0.3A | 3 | |||
| DC current gain hFE(2) | hFE(2) | 15 | 75 | VCE=-4V,IC=-3A | 3 | ||
| Collector-emitter saturation voltage | VCE(sat) | -1.5 | V | IC=-6A,IB=-0.6A | 3 | ||
| Base-emitter voltage | VBE | -2 | V | VCE=-4V,IC=-6A | 3 | ||
| Transition frequency | fT | 3 | MHz | VCE=-10V,IC=-500mA,f=1MHz | 3 |
CAD (KiCad official)
- Symbol:
MJD42CT4G - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
mjd42ct4g-etched.step/mjd42ct4g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mjd42ct4g.step/mjd42ct4g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MSKSEMI datasheet (6 pp, sha256
2e472745f2883ce1, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).