# MJD41CT4G

**MSKSEMI** · Bipolar (BJT) · TO-252

MJD41CT4G from MSKSEMI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN transistor; the datasheet's maximum emitter-base voltage VEBO is 5 V and the base-emitter resistors are built into the monolithic device. |
| 2 | COLLECTOR | passive | Collector terminal; the datasheet limits are VCBO 100 V, VCEO 100 V, continuous IC 6 A, pulsed ICP 10 A, and PC 1.25 W. |
| 3 | EMITTER | passive | Emitter terminal, the reference for the base-emitter voltage; the datasheet gives VBE of 2 V at VCE 4 V and IC 6 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO |  |  | 100 | V | Ta=25℃ unless otherwise noted | 2 |
| Collector-emitter voltage | VCEO |  |  | 100 | V | Ta=25℃ unless otherwise noted | 2 |
| Emitter-base voltage | VEBO |  |  | 5 | V | Ta=25℃ unless otherwise noted | 2 |
| Collector current - continuous | IC |  |  | 6 | A | Ta=25℃ unless otherwise noted | 2 |
| Collector current - pulse | ICP |  |  | 10 | A | Pulse test PW≤300μs, duty cycle≤2% (footnote *) | 2 |
| Collector power dissipation | PC |  |  | 1.25 | W | Ta=25℃ unless otherwise noted | 2 |
| Operating junction and storage temperature range | TJ,Tstg | -55 |  | 150 | ℃ |  | 2 |
| Collector-base breakdown voltage | V(BR)CBO | 100 |  |  | V | IC=100μA,IE=0 | 3 |
| Collector-emitter breakdown voltage | VCEO(sus) | 100 |  |  | V | IC=30mA,IB=0 | 3 |
| Emitter-base breakdown voltage | V(BR)EBO | 5 |  |  | V | IE=100μA,IC=0 | 3 |
| Collector cut-off current | ICEO |  |  | 50 | μA | VCB=60V,IE=0 | 3 |
| Emitter cut-off current | IEBO |  |  | 0.5 | mA | VEB=5V IC=0 | 3 |
| DC current gain hFE(1) | hFE(1) | 30 |  |  |  | VCE=4V IC=0.3A | 3 |
| DC current gain hFE(2) | hFE(2) | 15 |  | 75 |  | VCE=4V,IC=3A | 3 |
| Collector-emitter saturation voltage | VCE(sat) |  |  | 1.5 | V | IC=6A,IB=0.6A | 3 |
| Base-emitter voltage | VBE |  |  | 2 | V | VCE=4V,IC=6A | 3 |
| Transition frequency | fT | 3 |  |  | MHz | VCE=10V,IC=500mA,f=1MHz | 3 |

## CAD (KiCad official)

- Symbol: `MJD41CT4G`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `mjd41ct4g-etched.step` / `mjd41ct4g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mjd41ct4g.step` / `mjd41ct4g.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [MSKSEMI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590922990978740224) (6 pp, sha256 `f35e0a85fa34699e`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/mjd41ct4g-datasheet.pdf)