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MJD41CT4G

Public Made by Adom

by adom

MSKSEMI Bipolar (BJT), TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MJD41CT4G

MSKSEMI · Bipolar (BJT) · TO-252

MJD41CT4G from MSKSEMI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the NPN transistor; the datasheet's maximum emitter-base voltage VEBO is 5 V and the base-emitter resistors are built into the monolithic device.
2 COLLECTOR passive Collector terminal; the datasheet limits are VCBO 100 V, VCEO 100 V, continuous IC 6 A, pulsed ICP 10 A, and PC 1.25 W.
3 EMITTER passive Emitter terminal, the reference for the base-emitter voltage; the datasheet gives VBE of 2 V at VCE 4 V and IC 6 A.

Key specifications

Parameter Value
Manufacturer MSKSEMI
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage VCBO 100 V Ta=25℃ unless otherwise noted 2
Collector-emitter voltage VCEO 100 V Ta=25℃ unless otherwise noted 2
Emitter-base voltage VEBO 5 V Ta=25℃ unless otherwise noted 2
Collector current - continuous IC 6 A Ta=25℃ unless otherwise noted 2
Collector current - pulse ICP 10 A Pulse test PW≤300μs, duty cycle≤2% (footnote *) 2
Collector power dissipation PC 1.25 W Ta=25℃ unless otherwise noted 2
Operating junction and storage temperature range TJ,Tstg -55 150 ℃ 2
Collector-base breakdown voltage V(BR)CBO 100 V IC=100μA,IE=0 3
Collector-emitter breakdown voltage VCEO(sus) 100 V IC=30mA,IB=0 3
Emitter-base breakdown voltage V(BR)EBO 5 V IE=100μA,IC=0 3
Collector cut-off current ICEO 50 μA VCB=60V,IE=0 3
Emitter cut-off current IEBO 0.5 mA VEB=5V IC=0 3
DC current gain hFE(1) hFE(1) 30 VCE=4V IC=0.3A 3
DC current gain hFE(2) hFE(2) 15 75 VCE=4V,IC=3A 3
Collector-emitter saturation voltage VCE(sat) 1.5 V IC=6A,IB=0.6A 3
Base-emitter voltage VBE 2 V VCE=4V,IC=6A 3
Transition frequency fT 3 MHz VCE=10V,IC=500mA,f=1MHz 3

CAD (KiCad official)

  • Symbol: MJD41CT4G
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: mjd41ct4g-etched.step / mjd41ct4g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mjd41ct4g.step / mjd41ct4g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MSKSEMI datasheet (6 pp, sha256 f35e0a85fa34699e, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF