component
MJC30N65
Public Made by Adomby adom
miracle MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
MJC30N65
miracle · MOSFETs · TO-220
MJC30N65 from miracle, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate control input, rated for VGS up to ±30V with a typical threshold of 2.8V to 4.2V at ID = 250μA. |
| 2 | D | passive | Drain, rated for VDS up to 650V and continuous current ID of 30A at TC = 25°C; connected to the mounting tab. |
| 3 | S | passive | Source terminal, carrying up to 30A continuous at TC = 25°C and the body diode current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | miracle |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 655 | V | VGS = 0V, ID = 250μA | 1 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 650, VGS = 0V | 1 | ||
| Forward Gate Body Leakage Current | IGSS | 100 | nA | VDS = 0V, VGS = 30V | 1 | ||
| Gate Threshold Voltage | VGS(th) | 2.8 | 4.2 | V | VDS = VGS, ID = 250μA | 2 | |
| Static Drain-Source On-Resistance | RDS(on) | 95 | 110 | mΩ | VGS = 10V, ID = 15A | 2 | |
| Drain-Source Voltage | VDS | 650 | V | TJ = +25 ℃ to +150 ℃ | 1 | ||
| Gate-Source Voltage | VGS | -30 | 30 | V | TC = 25°C | 1 | |
| Drain Current-Continuous | ID | 30 | A | TC = 25°C | 1 | ||
| Drain Current-Pulsed | IDM | 90 | A | Repetitive rating: pulse width limited by maximum junction temperature | 1 | ||
| Maximum Power Dissipation | PD | 260 | W | TC = 25°C | 1 | ||
| Peak Diode Recovery dv/dt | dv/dt | 15 | V/ns | Pulse width ≦ 300μs; duty cycle ≦ 2% | 1 | ||
| Single Pulsed Avalanche Energy | EAS | 1051 | mJ | L = 10mH, VDD = 100V, IAS = 14.5A, RG = 25Ω, Starting TJ = 25 ℃ | 1 | ||
| Operating Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance, Junction to Case | RθJC | 0.48 | °C/W | 1 | |||
| Thermal Resistance, Junction to Ambient | RθJA | 62 | °C/W | 1 | |||
| Gate Resistance | RG | 13.4 | Ω | f = 1.0MHz | 2 | ||
| Input Capacitance | Ciss | 2497 | pF | VDS = 50V, VGS = 0V, f = 10kHz | 2 | ||
| Output Capacitance | Coss | 239 | pF | VDS = 50V, VGS = 0V, f = 10kHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 6.75 | pF | VDS = 50V, VGS = 0V, f = 10kHz | 2 | ||
| Turn-On Delay Time | td(on) | 23 | ns | VDD = 400V, VGS = 10V, ID = 25A, RG = 2Ω | 2 | ||
| Turn-On Rise Time | tr | 28 | ns | VDD = 400V, VGS = 10V, ID = 25A, RG = 2Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 108.4 | ns | VDD = 400V, VGS = 10V, ID = 25A, RG = 2Ω | 2 | ||
| Turn-Off Fall Time | tf | 24 | ns | VDD = 400V, VGS = 10V, ID = 25A, RG = 2Ω | 2 | ||
| Total Gate Charge | Qg | 52 | nC | VDD = 400V, VGS = 0 to 10V, ID = 25A | 2 | ||
| Gate-Source Charge | Qgs | 7.1 | nC | VDD = 400V, VGS = 0 to 10V, ID = 25A | 2 | ||
| Gate-Drain Charge | Qgd | 20 | nC | VDD = 400V, VGS = 0 to 10V, ID = 25A | 2 | ||
| Drain-Source Diode Forward Voltage | VSD | 0.69 | V | VGS = 0V, IF = 1A | 2 | ||
| Body Diode Reverse Recovery Time | Trr | 380.8 | ns | VR = 400V, IF = 25A, dIF/dt = 100A/μs | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 8.8 | μC | VR = 400V, IF = 25A, dIF/dt = 100A/μs | 2 | ||
| Peak reverse recovery current | Irrm | 45.2 | A | VR = 400V, IF = 25A, dIF/dt = 100A/μs | 2 |
CAD (KiCad official)
- Symbol:
MJC30N65 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
mjc30n65-etched.step/mjc30n65-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mjc30n65.step/mjc30n65.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: miracle datasheet (4 pp, sha256
f1ef6ef16d602536, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MJC30N65
**miracle** · MOSFETs · TO-220
MJC30N65 from miracle, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate control input, rated for VGS up to ±30V with a typical threshold of 2.8V to 4.2V at ID = 250μA. |
| 2 | D | passive | Drain, rated for VDS up to 650V and continuous current ID of 30A at TC = 25°C; connected to the mounting tab. |
| 3 | S | passive | Source terminal, carrying up to 30A continuous at TC = 25°C and the body diode current. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | miracle |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 655 | | | V | VGS = 0V, ID = 250μA | 1 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS = 650, VGS = 0V | 1 |
| Forward Gate Body Leakage Current | IGSS | | | 100 | nA | VDS = 0V, VGS = 30V | 1 |
| Gate Threshold Voltage | VGS(th) | 2.8 | | 4.2 | V | VDS = VGS, ID = 250μA | 2 |
| Static Drain-Source On-Resistance | RDS(on) | | 95 | 110 | mΩ | VGS = 10V, ID = 15A | 2 |
| Drain-Source Voltage | VDS | | | 650 | V | TJ = +25 ℃ to +150 ℃ | 1 |
| Gate-Source Voltage | VGS | -30 | | 30 | V | TC = 25°C | 1 |
| Drain Current-Continuous | ID | | | 30 | A | TC = 25°C | 1 |
| Drain Current-Pulsed | IDM | | | 90 | A | Repetitive rating: pulse width limited by maximum junction temperature | 1 |
| Maximum Power Dissipation | PD | | | 260 | W | TC = 25°C | 1 |
| Peak Diode Recovery dv/dt | dv/dt | | | 15 | V/ns | Pulse width ≦ 300μs; duty cycle ≦ 2% | 1 |
| Single Pulsed Avalanche Energy | EAS | | | 1051 | mJ | L = 10mH, VDD = 100V, IAS = 14.5A, RG = 25Ω, Starting TJ = 25 ℃ | 1 |
| Operating Junction Temperature | TJ | | | 150 | °C | | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | °C | | 1 |
| Thermal Resistance, Junction to Case | RθJC | | | 0.48 | °C/W | | 1 |
| Thermal Resistance, Junction to Ambient | RθJA | | | 62 | °C/W | | 1 |
| Gate Resistance | RG | | 13.4 | | Ω | f = 1.0MHz | 2 |
| Input Capacitance | Ciss | | 2497 | | pF | VDS = 50V, VGS = 0V, f = 10kHz | 2 |
| Output Capacitance | Coss | | 239 | | pF | VDS = 50V, VGS = 0V, f = 10kHz | 2 |
| Reverse Transfer Capacitance | Crss | | 6.75 | | pF | VDS = 50V, VGS = 0V, f = 10kHz | 2 |
| Turn-On Delay Time | td(on) | | 23 | | ns | VDD = 400V, VGS = 10V, ID = 25A, RG = 2Ω | 2 |
| Turn-On Rise Time | tr | | 28 | | ns | VDD = 400V, VGS = 10V, ID = 25A, RG = 2Ω | 2 |
| Turn-Off Delay Time | td(off) | | 108.4 | | ns | VDD = 400V, VGS = 10V, ID = 25A, RG = 2Ω | 2 |
| Turn-Off Fall Time | tf | | 24 | | ns | VDD = 400V, VGS = 10V, ID = 25A, RG = 2Ω | 2 |
| Total Gate Charge | Qg | | 52 | | nC | VDD = 400V, VGS = 0 to 10V, ID = 25A | 2 |
| Gate-Source Charge | Qgs | | 7.1 | | nC | VDD = 400V, VGS = 0 to 10V, ID = 25A | 2 |
| Gate-Drain Charge | Qgd | | 20 | | nC | VDD = 400V, VGS = 0 to 10V, ID = 25A | 2 |
| Drain-Source Diode Forward Voltage | VSD | | 0.69 | | V | VGS = 0V, IF = 1A | 2 |
| Body Diode Reverse Recovery Time | Trr | | 380.8 | | ns | VR = 400V, IF = 25A, dIF/dt = 100A/μs | 2 |
| Body Diode Reverse Recovery Charge | Qrr | | 8.8 | | μC | VR = 400V, IF = 25A, dIF/dt = 100A/μs | 2 |
| Peak reverse recovery current | Irrm | | 45.2 | | A | VR = 400V, IF = 25A, dIF/dt = 100A/μs | 2 |
## CAD (KiCad official)
- Symbol: `MJC30N65`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `mjc30n65-etched.step` / `mjc30n65-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mjc30n65.step` / `mjc30n65.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [miracle datasheet](docs/mjc30n65-datasheet.pdf) (4 pp, sha256 `f1ef6ef16d602536`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/mjc30n65-datasheet.pdf)