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MJC30N65

Public Made by Adom

by adom

miracle MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MJC30N65

miracle · MOSFETs · TO-220

MJC30N65 from miracle, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate control input, rated for VGS up to ±30V with a typical threshold of 2.8V to 4.2V at ID = 250μA.
2 D passive Drain, rated for VDS up to 650V and continuous current ID of 30A at TC = 25°C; connected to the mounting tab.
3 S passive Source terminal, carrying up to 30A continuous at TC = 25°C and the body diode current.

Key specifications

Parameter Value
Manufacturer miracle
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 655 V VGS = 0V, ID = 250μA 1
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 650, VGS = 0V 1
Forward Gate Body Leakage Current IGSS 100 nA VDS = 0V, VGS = 30V 1
Gate Threshold Voltage VGS(th) 2.8 4.2 V VDS = VGS, ID = 250μA 2
Static Drain-Source On-Resistance RDS(on) 95 110 mΩ VGS = 10V, ID = 15A 2
Drain-Source Voltage VDS 650 V TJ = +25 ℃ to +150 ℃ 1
Gate-Source Voltage VGS -30 30 V TC = 25°C 1
Drain Current-Continuous ID 30 A TC = 25°C 1
Drain Current-Pulsed IDM 90 A Repetitive rating: pulse width limited by maximum junction temperature 1
Maximum Power Dissipation PD 260 W TC = 25°C 1
Peak Diode Recovery dv/dt dv/dt 15 V/ns Pulse width ≦ 300μs; duty cycle ≦ 2% 1
Single Pulsed Avalanche Energy EAS 1051 mJ L = 10mH, VDD = 100V, IAS = 14.5A, RG = 25Ω, Starting TJ = 25 ℃ 1
Operating Junction Temperature TJ 150 °C 1
Storage Temperature Range TSTG -55 150 °C 1
Thermal Resistance, Junction to Case RθJC 0.48 °C/W 1
Thermal Resistance, Junction to Ambient RθJA 62 °C/W 1
Gate Resistance RG 13.4 Ω f = 1.0MHz 2
Input Capacitance Ciss 2497 pF VDS = 50V, VGS = 0V, f = 10kHz 2
Output Capacitance Coss 239 pF VDS = 50V, VGS = 0V, f = 10kHz 2
Reverse Transfer Capacitance Crss 6.75 pF VDS = 50V, VGS = 0V, f = 10kHz 2
Turn-On Delay Time td(on) 23 ns VDD = 400V, VGS = 10V, ID = 25A, RG = 2Ω 2
Turn-On Rise Time tr 28 ns VDD = 400V, VGS = 10V, ID = 25A, RG = 2Ω 2
Turn-Off Delay Time td(off) 108.4 ns VDD = 400V, VGS = 10V, ID = 25A, RG = 2Ω 2
Turn-Off Fall Time tf 24 ns VDD = 400V, VGS = 10V, ID = 25A, RG = 2Ω 2
Total Gate Charge Qg 52 nC VDD = 400V, VGS = 0 to 10V, ID = 25A 2
Gate-Source Charge Qgs 7.1 nC VDD = 400V, VGS = 0 to 10V, ID = 25A 2
Gate-Drain Charge Qgd 20 nC VDD = 400V, VGS = 0 to 10V, ID = 25A 2
Drain-Source Diode Forward Voltage VSD 0.69 V VGS = 0V, IF = 1A 2
Body Diode Reverse Recovery Time Trr 380.8 ns VR = 400V, IF = 25A, dIF/dt = 100A/μs 2
Body Diode Reverse Recovery Charge Qrr 8.8 μC VR = 400V, IF = 25A, dIF/dt = 100A/μs 2
Peak reverse recovery current Irrm 45.2 A VR = 400V, IF = 25A, dIF/dt = 100A/μs 2

CAD (KiCad official)

  • Symbol: MJC30N65
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: mjc30n65-etched.step / mjc30n65-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mjc30n65.step / mjc30n65.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: miracle datasheet (4 pp, sha256 f1ef6ef16d602536, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF