# ME2320D-G

**MATSUKI** · MOSFETs · SOT-23

ME2320D-G from MATSUKI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate, ESD-protected input (HBM ≥2kV) with VGS rated ±8 V and threshold 0.4 V min to 1 V max at ID=250μA. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, connected to the body diode anode. |
| 3 | D | passive | Drain terminal with VDS rated 20 V and continuous drain current of 6.4 A at TA=25℃ (pulsed 26 A). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | MATSUKI |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 20 | V |  | 1 |
| Gate-Source Voltage | VGS | -8 |  | 8 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 6.4 | A | TA=25℃ | 1 |
| Continuous Drain Current | ID |  |  | 5.1 | A | TA=70℃ | 1 |
| Pulsed Drain Current | IDM |  |  | 26 | A |  | 1 |
| Maximum Power Dissipation | PD |  |  | 1.4 | W | TA=25℃ | 1 |
| Maximum Power Dissipation | PD |  |  | 0.9 | W | TA=70℃ | 1 |
| Operating Junction Temperature | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction to Ambient | RθJA |  |  | 90 | ℃/W | Device mounted on 1in2 FR4 board with 2 oz copper (footnote *) | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 20 |  |  | V | VGS=0V, ID=250μA | 2 |
| Gate Threshold Voltage | VGS(th) | 0.4 |  | 1 | V | VDS=VGS, ID=250μA | 2 |
| Gate Leakage Current | IGSS | -1 |  | 1 | μA | VDS=0V, VGS=±4.5V | 2 |
| Gate Leakage Current | IGSS | -10 |  | 10 | μA | VDS=0V, VGS=±8V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=20V, VGS=0V | 2 |
| Drain-Source On-Resistance | RDS(ON) |  | 17 | 21 | mΩ | VGS=4.5V, ID=6.5A | 2 |
| Drain-Source On-Resistance | RDS(ON) |  | 20 | 25 | mΩ | VGS=2.5V, ID=5.5A | 2 |
| Drain-Source On-Resistance | RDS(ON) |  | 30 | 40 | mΩ | VGS=1.8V, ID=5A | 2 |
| Diode Forward Voltage | VSD |  | 0.6 | 1 | V | IS=1A, VGS=0V | 2 |

## CAD (KiCad official)

- Symbol: `ME2320D-G`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `me2320d-g-etched.step` / `me2320d-g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `me2320d-g.step` / `me2320d-g.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [MATSUKI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603040475662471168) (5 pp, sha256 `9fc08d5b015f0ea0`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/me2320d-g-datasheet.pdf)