component
ME2320D-G
Public Made by Adomby adom
MATSUKI MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownME2320D-G
MATSUKI · MOSFETs · SOT-23
ME2320D-G from MATSUKI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate, ESD-protected input (HBM ≥2kV) with VGS rated ±8 V and threshold 0.4 V min to 1 V max at ID=250μA. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, connected to the body diode anode. |
| 3 | D | passive | Drain terminal with VDS rated 20 V and continuous drain current of 6.4 A at TA=25℃ (pulsed 26 A). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MATSUKI |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Gate-Source Voltage | VGS | -8 | 8 | V | 1 | ||
| Continuous Drain Current | ID | 6.4 | A | TA=25℃ | 1 | ||
| Continuous Drain Current | ID | 5.1 | A | TA=70℃ | 1 | ||
| Pulsed Drain Current | IDM | 26 | A | 1 | |||
| Maximum Power Dissipation | PD | 1.4 | W | TA=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 0.9 | W | TA=70℃ | 1 | ||
| Operating Junction Temperature | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction to Ambient | RθJA | 90 | ℃/W | Device mounted on 1in2 FR4 board with 2 oz copper (footnote *) | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | 20 | V | VGS=0V, ID=250μA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 0.4 | 1 | V | VDS=VGS, ID=250μA | 2 | |
| Gate Leakage Current | IGSS | -1 | 1 | μA | VDS=0V, VGS=±4.5V | 2 | |
| Gate Leakage Current | IGSS | -10 | 10 | μA | VDS=0V, VGS=±8V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=20V, VGS=0V | 2 | ||
| Drain-Source On-Resistance | RDS(ON) | 17 | 21 | mΩ | VGS=4.5V, ID=6.5A | 2 | |
| Drain-Source On-Resistance | RDS(ON) | 20 | 25 | mΩ | VGS=2.5V, ID=5.5A | 2 | |
| Drain-Source On-Resistance | RDS(ON) | 30 | 40 | mΩ | VGS=1.8V, ID=5A | 2 | |
| Diode Forward Voltage | VSD | 0.6 | 1 | V | IS=1A, VGS=0V | 2 |
CAD (KiCad official)
- Symbol:
ME2320D-G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
me2320d-g-etched.step/me2320d-g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);me2320d-g.step/me2320d-g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MATSUKI datasheet (5 pp, sha256
9fc08d5b015f0ea0, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).