# MDT2N60

**Minos** · MOSFETs · TO-252

MDT2N60 from Minos, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the MOSFET; the datasheet gives gate-source voltage limits of ±30 V (VGSS). |
| 2 | Drain | passive | Drain terminal of the MOSFET; the drain-source breakdown voltage is 600 V minimum (VDSS). |
| 3 | Source | passive | Source terminal of the MOSFET; the body diode forward voltage VSD is 1.4 V at ISD = 2.0 A with VGS = 0 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Minos |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS |  |  | 600 | V |  | 1 |
| Gate-Source Voltage | VGSS | -30 |  | 30 | V |  | 1 |
| Avalanche Current | IAR |  |  | 2 | A | Repetitive rating, pulse width limited by maximum junction temperature (Note 2) | 1 |
| Continuous Drain Current | ID |  |  | 2 | A |  | 1 |
| Pulsed Drain Current | IDM |  |  | 8 | A | Repetitive rating, pulse width limited by maximum junction temperature (Note 2) | 1 |
| Avalanche Energy Single Pulsed | EAS |  |  | 115 | mJ | L=30mH, IAS=2.7A, VDD=50V, RG=25Ω, Starting TJ=25°C (Note 3) | 1 |
| Power Dissipation (TO-252) | PD |  |  | 34 | W | TO-252 | 1 |
| Junction Temperature | TJ |  |  | 150 | °C |  | 1 |
| Operating Temperature | TOPR | -55 |  | 150 | °C |  | 1 |
| Storage Temperature | TSTG | -55 |  | 150 | °C |  | 1 |
| Junction to Ambient (TO-251/TO-252) | θJA |  |  | 110 | °C/W | TO-251/TO-252 | 2 |
| Junction to Case (TO-252) | θJC |  |  | 2.9 | °C/W | TO-252 | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 600 |  |  | V | VGS = 0V, ID = 250μA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 10 | μA | VDS = 600V, VGS = 0V | 2 |
| Gate-Source Leakage Current Forward | IGSS |  |  | 100 | nA | VGS = 30V, VDS = 0V | 2 |
| Gate-Source Leakage Current Reverse | IGSS |  |  | -100 | nA | VGS = -30V, VDS = 0V | 2 |
| Gate Threshold Voltage | VGS(TH) | 2 |  | 4 | V | VDS = VGS, ID = 250μA | 2 |
| Static Drain-Source On-State Resistance | RDS(ON) |  | 4 | 4.4 | Ω | VGS = 10V, ID = 1A | 2 |
| Maximum Continuous Drain-Source Diode Forward Current | IS |  |  | 2 | A |  | 2 |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM |  |  | 8 | A |  | 2 |

## CAD (KiCad official)

- Symbol: `MDT2N60`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `mdt2n60-etched.step` / `mdt2n60-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mdt2n60.step` / `mdt2n60.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Minos datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590280868091621376) (9 pp, sha256 `cd66ca75307fec6b`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/mdt2n60-datasheet.pdf)