component
MDT2N60
Public Made by Adomby adom
Minos MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMDT2N60
Minos · MOSFETs · TO-252
MDT2N60 from Minos, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the MOSFET; the datasheet gives gate-source voltage limits of ±30 V (VGSS). |
| 2 | Drain | passive | Drain terminal of the MOSFET; the drain-source breakdown voltage is 600 V minimum (VDSS). |
| 3 | Source | passive | Source terminal of the MOSFET; the body diode forward voltage VSD is 1.4 V at ISD = 2.0 A with VGS = 0 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Minos |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 600 | V | 1 | |||
| Gate-Source Voltage | VGSS | -30 | 30 | V | 1 | ||
| Avalanche Current | IAR | 2 | A | Repetitive rating, pulse width limited by maximum junction temperature (Note 2) | 1 | ||
| Continuous Drain Current | ID | 2 | A | 1 | |||
| Pulsed Drain Current | IDM | 8 | A | Repetitive rating, pulse width limited by maximum junction temperature (Note 2) | 1 | ||
| Avalanche Energy Single Pulsed | EAS | 115 | mJ | L=30mH, IAS=2.7A, VDD=50V, RG=25Ω, Starting TJ=25°C (Note 3) | 1 | ||
| Power Dissipation (TO-252) | PD | 34 | W | TO-252 | 1 | ||
| Junction Temperature | TJ | 150 | °C | 1 | |||
| Operating Temperature | TOPR | -55 | 150 | °C | 1 | ||
| Storage Temperature | TSTG | -55 | 150 | °C | 1 | ||
| Junction to Ambient (TO-251/TO-252) | θJA | 110 | °C/W | TO-251/TO-252 | 2 | ||
| Junction to Case (TO-252) | θJC | 2.9 | °C/W | TO-252 | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 600 | V | VGS = 0V, ID = 250μA | 2 | ||
| Drain-Source Leakage Current | IDSS | 10 | μA | VDS = 600V, VGS = 0V | 2 | ||
| Gate-Source Leakage Current Forward | IGSS | 100 | nA | VGS = 30V, VDS = 0V | 2 | ||
| Gate-Source Leakage Current Reverse | IGSS | -100 | nA | VGS = -30V, VDS = 0V | 2 | ||
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VDS = VGS, ID = 250μA | 2 | |
| Static Drain-Source On-State Resistance | RDS(ON) | 4 | 4.4 | Ω | VGS = 10V, ID = 1A | 2 | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | 2 | A | 2 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 8 | A | 2 |
CAD (KiCad official)
- Symbol:
MDT2N60 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
mdt2n60-etched.step/mdt2n60-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mdt2n60.step/mdt2n60.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Minos datasheet (9 pp, sha256
cd66ca75307fec6b, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).