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MD52E33WB6

Shanghai Mingda Microelectronics · Voltage Regulators - Linear, Low Drop Out (LDO) Regulators · XDFN-4-EP(1x1)

MD52E33WB6 from Shanghai Mingda Microelectronics, in a XDFN-4-EP(1x1). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 VOUT power_out Regulated output; the datasheet states VOUT must not exceed VIN+0.3V, otherwise reverse current through the parasitic diode can destroy the IC.
2 GND power_in Ground reference pin for the regulator.
3 EN input ON/OFF control, enable high: VENH is 1.0 V to 7.0 V and VENL is 0 V to 0.38 V; driving EN low shuts the IC down and discharges COUT.
4 VIN power_in Input supply; the datasheet gives an operating input range of 2.2 V to 7.0 V and an absolute maximum of -0.3 V to 8 V.
5 EP passive Exposed pad shown on the DFN1*1-4L top view; the datasheet does not state its electrical connection or function.

Key specifications

Parameter Value
Manufacturer Shanghai Mingda Microelectronics
Package XDFN-4-EP(1x1)
Category Power Management (PMIC)
Pins 5

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Output Voltage (VOUT≥2.0V, 3.3V variant) VOUT(S) 0.98 1.02 x VOUT(S) VIN=VOUT(S)+1.0V, IOUT=10mA, VOUT(S)≥2.0V 4
Output voltage accuracy (feature) -2 2 % Highly Accurate feature 1
Temperature Stability ΔVOUT/ΔT -50 50 ppm/℃ VIN=VEN=VOUT(S)+1.0V, IOUT=1mA, -40℃≤Ta≤125℃ 4
Dropout Voltage (VOUT≥3V) VDROP 230 mV VEN=VIN, VOUT≥3V, IOUT=500mA 4
Line Regulation ΔVOUT/ΔVIN 0.05 0.1 %/V VOUT(S)+0.5V≤VIN=VEN≤7V, IOUT=10mA 4
Load Regulation VOUT2 50 90 mV VIN=VEN=VOUT(S)+1.0V, 1mA≤IOUT≤500mA 4
GND Current (no load) IGND 0.6 0.9 μA VEN=VIN, no load 4
GND Current (IOUT=500mA) IGND 210 μA VEN=VIN, IOUT=500mA 4
Shutdown Current ISHUT 0.01 0.1 μA VIN=7.0V, VEN=0 4
Input Voltage VIN 2.2 7 V 4
Maximum Output Current IOUTMAX 450 500 mA 4
Current Limit ILIM 750 mA VIN=VEN=VOUT(S)+1.0V, VOUT=0.95×VOUT(S) 4
Short Circuit Current ISHORT 50 mA VIN=VEN=VOUT(S)+1.0V, VOUT=0V 4
COUT Auto Discharge Resistance RDCHG 280 450 640 Ω VEN=0, VOUT=VOUT(S) 4
Power Supply Rejection Ratio (10Hz) PSRR 64 dB f=10Hz, IOUT=10mA 4
Power Supply Rejection Ratio (100Hz) PSRR 51 dB f=100Hz, IOUT=10mA 4
Power Supply Rejection Ratio (1kHz) PSRR 34 dB f=1kHz, IOUT=10mA 4
EN 'H' Level Voltage VENH 1 7 V 4
EN 'L' Level Voltage VENL 0 0.38 V 4
EN 'H' Level Current IENH -0.1 0.1 μA VIN=7.0V, VEN=VIN 4
EN 'L' Level Current IENL -0.1 0.1 μA VIN=7.0V, VEN=0 4
Input Voltage (absolute maximum) VIN -0.3 8 V 3
ESD Protection HBM ESD HBM 6000 V 3
Power Dissipation (DFN1*1-4L) PD 200 mW DFN1*1-4L package 3
Thermal Resistance Junction-to-Board (DFN1*1-4L) RθJB 160 ℃/W DFN1*1-4L; mounted on JEDEC standard 4-layer (2s2p) PCB 3
Operating Ambient Temperature Topr -40 85 ℃ 3
Storage Temperature Tstg -40 125 ℃ 3
Output Voltage (nominal, MD52E33 selection) VOUT 3.3 V Product selection MD52E33WB6 2

CAD (KiCad official)

  • Symbol: MD52E33WB6
  • Footprint: Package_DFN_QFN:OnSemi_XDFN4-1EP_1.0x1.0mm_EP0.52x0.52mm
  • 3D model: XDFN-4-EP(1x1) (KiCad packages3D, STEP)
  • 3D model files: md52e33wb6-etched.step / md52e33wb6-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); md52e33wb6.step / md52e33wb6.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Shanghai Mingda Microelectronics datasheet (14 pp, sha256 4168b8cf3e52f15f, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF