# MCT6

**onsemi** · Transistor, Photovoltaic Output Optoisolators · DIP-8

MCT6 from onsemi, in a DIP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | ANODE | passive | Anode of channel 1 infrared emitting diode; IF max 60 mA DC, VR max 3 V. |
| 2 | CATHODE | passive | Cathode of channel 1 infrared emitting diode; forward voltage 1.2 V typ, 1.5 V max at IF = 20 mA. |
| 3 | CATHODE | passive | Cathode of channel 2 infrared emitting diode; forward voltage 1.2 V typ, 1.5 V max at IF = 20 mA. |
| 4 | ANODE | passive | Anode of channel 2 infrared emitting diode; IF max 60 mA DC, VR max 3 V. |
| 5 | EMITTER | passive | Emitter of channel 2 NPN phototransistor; BVECO min 6 V at IE = 100 µA. |
| 6 | COLLECTOR | passive | Collector of channel 2 NPN phototransistor; BVCEO min 30 V at IC = 1.0 mA, IC max 30 mA continuous. |
| 7 | COLLECTOR | passive | Collector of channel 1 NPN phototransistor; BVCEO min 30 V at IC = 1.0 mA, IC max 30 mA continuous. |
| 8 | EMITTER | passive | Emitter of channel 1 NPN phototransistor; BVECO min 6 V at IE = 100 µA. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | DIP-8 |
| Category | Optoisolators |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Storage Temperature | TSTG | -55 |  | 150 | °C |  | 4 |
| Operating Temperature | TOPR | -55 |  | 100 | °C |  | 4 |
| Junction Temperature | TJ | -55 |  | 125 | °C |  | 4 |
| Lead Solder Temperature | TSOL |  |  | 260 | °C | for 10 seconds | 4 |
| Total Device Power Dissipation | PD |  |  | 400 | mW | TA = 25°C | 4 |
| DC / Average Forward Input Current (each channel) | IF |  |  | 60 | mA |  | 4 |
| Forward Current - Peak (each channel) | IF(pk) |  |  | 3 | A | PW = 1 µs, 300 pps | 4 |
| Reverse Input Voltage (each channel) | VR |  |  | 3 | V |  | 4 |
| Total Power Dissipation (Emitter, each channel) | PD(EMITTER) |  |  | 100 | mW | TA = 25°C | 4 |
| Continuous Collector Current (each channel) | IC |  |  | 30 | mA |  | 4 |
| Total Power Dissipation (Detector, each channel) | PD(DETECTOR) |  |  | 150 | mW | TA = 25°C | 4 |
| Current Transfer Ratio, Collector-to-Emitter (MCT6) | CTR | 20 |  |  | % | IF = 10 mA, VCE = 10 V | 5 |
| Input Forward Voltage | VF |  | 1.2 | 1.5 | V | IF = 20 mA | 5 |
| Reverse Voltage | VR | 3 |  | 25 | V | IR = 10 µA | 5 |
| Reverse Leakage Current | IR |  | 0.001 | 10 | µA | VR = 5 V | 5 |
| Junction Capacitance | CJ |  | 50 |  | pF | VF = 0 V, f = 1 MHz | 5 |
| Collector-to-Emitter Breakdown Voltage | BVCEO | 30 |  | 85 | V | IC = 1.0 mA, IF = 0 | 5 |
| Emitter-to-Collector Breakdown Voltage | BVECO | 6 |  | 13 | V | IE = 100 µA, IF = 0 | 5 |
| Collector-to-Emitter Dark Current | ICEO |  | 5 | 100 | nA | VCE = 10 V, IF = 0 | 5 |
| Capacitance (collector-emitter) | CCE |  | 8 |  | pF | VCE = 0 V, f = 1 MHz | 5 |
| Saturation Voltage, Collector-to-Emitter | VCE(SAT) |  | 0.15 | 0.4 | V | IF = 16 mA, IC = 2 mA | 5 |
| Turn-On Time (non-saturated) | TON |  | 3 |  | µs | RL = 100 Ω, IC = 2 mA, VCC = 10 V | 5 |
| Turn-Off Time (non-saturated) | TOFF |  | 3 |  | µs | RL = 100 Ω, IC = 2 mA, VCC = 10 V | 5 |
| Rise Time | TR |  | 2.4 |  | µs | RL = 100 Ω, IC = 2 mA, VCC = 10 V | 5 |
| Fall Time | TF |  | 2.4 |  | µs | RL = 100 Ω, IC = 2 mA, VCC = 10 V | 5 |
| Turn-On Time (saturated) | TON |  | 2.4 |  | µs | IF = 16 mA, RL = 1.9 kΩ, VCE = 5 V | 5 |
| Turn-Off Time (saturated) | TOFF |  | 25 |  | µs | IF = 16 mA, RL = 1.9 kΩ, VCE = 5 V | 5 |
| Input-Output Isolation Voltage | VISO |  | 5000 |  | VACRMS | II-O ≤ 10 µA, t = 1 Minute | 5 |
| Isolation Capacitance | CISO |  | 0.5 |  | pF | f = 1 MHz | 5 |
| Isolation Resistance | RISO |  | 1011 |  | Ω | VI-O = 500 VDC | 5 |

## CAD (KiCad official)

- Symbol: `MCT6`
- Footprint: `Package_DIP:DIP-8_W7.62mm`
- 3D model: DIP-8 (KiCad packages3D, STEP)
- 3D model files: `mct6-etched.step` / `mct6-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mct6.step` / `mct6.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [onsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588907442596433920) (13 pp, sha256 `3e52cfadfe94f5a3`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** `ds2sf` (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/mct6-datasheet.pdf)