component
MCT6
Public Made by Adomby adom
onsemi Transistor, Photovoltaic Output Optoisolators, DIP-8. Pinout reviewed by a person against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 7d ago |
| viewers | 7d ago |
| mct6-etched.glb | 7d ago |
| mct6-etched.step | 7d ago |
| mct6-hero.glb | 7d ago |
| mct6-hero.overlay.json | 7d ago |
| mct6.glb | 7d ago |
| mct6.kicad_mod | 7d ago |
| mct6.kicad_sym | 7d ago |
| mct6.lbr | 7d ago |
| mct6.step | 7d ago |
| package.json | 7d ago |
| page.json | 7d ago |
| README.md | 7d ago |
MCT6
onsemi · Transistor, Photovoltaic Output Optoisolators · DIP-8
MCT6 from onsemi, in a DIP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | ANODE | passive | Anode of channel 1 infrared emitting diode; IF max 60 mA DC, VR max 3 V. |
| 2 | CATHODE | passive | Cathode of channel 1 infrared emitting diode; forward voltage 1.2 V typ, 1.5 V max at IF = 20 mA. |
| 3 | CATHODE | passive | Cathode of channel 2 infrared emitting diode; forward voltage 1.2 V typ, 1.5 V max at IF = 20 mA. |
| 4 | ANODE | passive | Anode of channel 2 infrared emitting diode; IF max 60 mA DC, VR max 3 V. |
| 5 | EMITTER | passive | Emitter of channel 2 NPN phototransistor; BVECO min 6 V at IE = 100 µA. |
| 6 | COLLECTOR | passive | Collector of channel 2 NPN phototransistor; BVCEO min 30 V at IC = 1.0 mA, IC max 30 mA continuous. |
| 7 | COLLECTOR | passive | Collector of channel 1 NPN phototransistor; BVCEO min 30 V at IC = 1.0 mA, IC max 30 mA continuous. |
| 8 | EMITTER | passive | Emitter of channel 1 NPN phototransistor; BVECO min 6 V at IE = 100 µA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | DIP-8 |
| Category | Optoisolators |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Storage Temperature | TSTG | -55 | 150 | °C | 4 | ||
| Operating Temperature | TOPR | -55 | 100 | °C | 4 | ||
| Junction Temperature | TJ | -55 | 125 | °C | 4 | ||
| Lead Solder Temperature | TSOL | 260 | °C | for 10 seconds | 4 | ||
| Total Device Power Dissipation | PD | 400 | mW | TA = 25°C | 4 | ||
| DC / Average Forward Input Current (each channel) | IF | 60 | mA | 4 | |||
| Forward Current - Peak (each channel) | IF(pk) | 3 | A | PW = 1 µs, 300 pps | 4 | ||
| Reverse Input Voltage (each channel) | VR | 3 | V | 4 | |||
| Total Power Dissipation (Emitter, each channel) | PD(EMITTER) | 100 | mW | TA = 25°C | 4 | ||
| Continuous Collector Current (each channel) | IC | 30 | mA | 4 | |||
| Total Power Dissipation (Detector, each channel) | PD(DETECTOR) | 150 | mW | TA = 25°C | 4 | ||
| Current Transfer Ratio, Collector-to-Emitter (MCT6) | CTR | 20 | % | IF = 10 mA, VCE = 10 V | 5 | ||
| Input Forward Voltage | VF | 1.2 | 1.5 | V | IF = 20 mA | 5 | |
| Reverse Voltage | VR | 3 | 25 | V | IR = 10 µA | 5 | |
| Reverse Leakage Current | IR | 0.001 | 10 | µA | VR = 5 V | 5 | |
| Junction Capacitance | CJ | 50 | pF | VF = 0 V, f = 1 MHz | 5 | ||
| Collector-to-Emitter Breakdown Voltage | BVCEO | 30 | 85 | V | IC = 1.0 mA, IF = 0 | 5 | |
| Emitter-to-Collector Breakdown Voltage | BVECO | 6 | 13 | V | IE = 100 µA, IF = 0 | 5 | |
| Collector-to-Emitter Dark Current | ICEO | 5 | 100 | nA | VCE = 10 V, IF = 0 | 5 | |
| Capacitance (collector-emitter) | CCE | 8 | pF | VCE = 0 V, f = 1 MHz | 5 | ||
| Saturation Voltage, Collector-to-Emitter | VCE(SAT) | 0.15 | 0.4 | V | IF = 16 mA, IC = 2 mA | 5 | |
| Turn-On Time (non-saturated) | TON | 3 | µs | RL = 100 Ω, IC = 2 mA, VCC = 10 V | 5 | ||
| Turn-Off Time (non-saturated) | TOFF | 3 | µs | RL = 100 Ω, IC = 2 mA, VCC = 10 V | 5 | ||
| Rise Time | TR | 2.4 | µs | RL = 100 Ω, IC = 2 mA, VCC = 10 V | 5 | ||
| Fall Time | TF | 2.4 | µs | RL = 100 Ω, IC = 2 mA, VCC = 10 V | 5 | ||
| Turn-On Time (saturated) | TON | 2.4 | µs | IF = 16 mA, RL = 1.9 kΩ, VCE = 5 V | 5 | ||
| Turn-Off Time (saturated) | TOFF | 25 | µs | IF = 16 mA, RL = 1.9 kΩ, VCE = 5 V | 5 | ||
| Input-Output Isolation Voltage | VISO | 5000 | VACRMS | II-O ≤ 10 µA, t = 1 Minute | 5 | ||
| Isolation Capacitance | CISO | 0.5 | pF | f = 1 MHz | 5 | ||
| Isolation Resistance | RISO | 1011 | Ω | VI-O = 500 VDC | 5 |
CAD (KiCad official)
- Symbol:
MCT6 - Footprint:
Package_DIP:DIP-8_W7.62mm - 3D model: DIP-8 (KiCad packages3D, STEP)
- 3D model files:
mct6-etched.step/mct6-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mct6.step/mct6.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (13 pp, sha256
3e52cfadfe94f5a3, retrieved 2026-10-21, tier: lcsc) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).